Datasheet

TPS2543
www.ti.com SLVSBA6 –FEBRUARY 2012
ELECTRICAL CHARACTERISTICS, HIGH-BANDWIDTH SWITCH
Unless otherwise noted: –40 ≤ T
J
≤ 125°C, 4.5 V ≤ V
IN
≤ 5.5 V, V
EN
= V
IN
, V
ILIM_SEL
= V
IN
, V
CTL1
= V
CTL2
= V
CTL3
= V
IN
. R
FAULT
=
R
STATUS
= 10 kΩ, R
ILIM_HI
= 20 kΩ, R
ILIM_LO
= 80.6 kΩ, Positive currents are into pins. Typical values are at 25°C. All voltages
are with respect to GND.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
HIGH-BANDWIDTH ANALOG SWITCH
V
DP/DM_OUT
= 0 V, I
DP/DM_IN
= 30 mA 2 4
DP/DM switch on resistance Ω
V
DP/DM_OUT
= 2.4 V, I
DP/DM_IN
= –15 mA 3 6
V
DP/DM_OUT
= 0 V, I
DP/DM_IN
= 30 mA 0.05 0.15
Switch resistance mismatch between
Ω
DP / DM channels
V
DP/DM_OUT
= 2.4 V, I
DP/DM_IN
= –15 mA 0.05 0.15
V
EN
= 0 V, V
DP/DM_IN
= 0.3 V, V
ac
= 0.6 V
pk-pk
,
DP/DM switch off-state capacitance
(1)
3 3.6 pF
f = 1 MHz
DP/DM switch on-state capacitance
(2)
V
DP/DM_IN
= 0.3 V, V
ac
= 0.6 V
pk-pk
, f = 1 MHz 5.4 6.2 pF
O
IRR
Off-state isolation
(3)
V
EN
= 0 V, f = 250 MHz 33 dB
X
TALK
On-state cross channel isolation
(3)
f = 250 MHz 52 dB
V
EN
= 0 V, V
DP/DM_IN
= 3.6 V, V
DP/DM_OUT
= 0 V,
Off state leakage current 0.1 1.5 µA
measure I
DP/DM_OUT
BW Bandwidth (–3dB)
(3)
R
L
= 50 Ω 2.6 GHz
t
pd
Propagation delay
(3)
0.25 ns
Skew between opposite transitions of the
t
SK
0.1 0.2 ns
same port (t
PHL
– t
PLH
)
(1) The resistance in series with the parasitic capacitance to GND is typically 250 Ω.
(2) The resistance in series with the parasitic capacitance to GND is typically 150 Ω
(3) These parameters are provided for reference only and do not constitute part of TI's published device specifications for purposes of TI's
product warranty.
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