Datasheet

TPS2543
SLVSBA6 –FEBRUARY 2012 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise noted: –40 ≤ T
J
≤ 125°C, 4.5 V ≤ V
IN
≤ 5.5 V, V
EN
= V
IN
, V
ILIM_SEL
= V
IN
, V
CTL1
= V
CTL2
= V
CTL3
= V
IN
. R
FAULT
=
R
STATUS
= 10 kΩ, R
ILIM_HI
= 20 kΩ, R
ILIM_LO
= 80.6 kΩ. Positive currents are into pins. Typical values are at 25°C. All voltages
are with respect to GND.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
EN, ILIMSEL, CTL1, CTL2, CTL3 INPUTS
Input pin rising logic threshold
1 1.35 1.70 V
voltage
Input pin falling logic threshold
0.85 1.15 1.45
voltage
Hysteresis
(2)
200 mV
Input current Pin voltage = 0 V or 5.5 V –0.5 0.5 µA
ILIMSEL CURRENT LIMIT
V
ILIM_SEL
= 0 V, R
ILIM_LO
= 210 kΩ 205 240 275
V
ILIM_SEL
= 0 V, R
ILIM_LO
= 80.6 kΩ 575 625 680
I
OS
OUT short circuit current limit
(3)
V
ILIM_SEL
= 0 V, R
ILIM_LO
= 22.1 kΩ 2120 2275 2430 mA
V
ILIM_SEL
= V
IN
, R
ILIM_H
I = 20 kΩ 2340 2510 2685
V
ILIM_SEL
= V
IN
, R
ILIM_HI
= 16.9 kΩ 2770 2970 3170
Response time to OUT short- V
IN
= 5.0 V, R = 0.1Ω, lead length = 2 inches (see
t
IOS
1.5 µs
circuit
(2)
Figure 27)
SUPPLY CURRENT
I
IN_OFF
Disabled IN supply current V
EN
= 0 V, V
OUT
= 0 V, –40 ≤ T
J
≤ 85°C 2 µA
V
CTL1
= V
CTL2
= V
IN
, V
CTL3
= 0 V or V
IN
, V
ILIM_SEL
= 0 V 155 210
V
CTL1
= V
CTL2
= V
IN
, V
CTL3
= 0V, V
ILIM_SE
L = V
IN
175 230
I
IN_ON
Enabled IN supply current µA
V
CTL1
= V
CTL2
= V
IN
, V
CTL3
= VIN, V
ILIM_SEL
= V
IN
185 240
V
CTL1
= 0V, V
CTL2
= V
CTL3
= V
IN
205 260
UNDERVOLTAGE LOCKOUT
V
UVLO
IN rising UVLO threshold voltage 3.9 4.1 4.3 V
Hysteresis
(2)
100 mV
FAULT
Output low voltage I
FAULT
= 1 mA 100 mV
Off-state leakage V
FAULT
= 6.5 V 1 µA
Over current FAULT rising and
5 8.2 12 ms
falling deglitch
STATUS
Output low voltage I
STATUS
= 1 mA 100 mV
Off-state leakage V
STATUS
= 6.5 V 1 µA
THERMAL SHUTDOWN
Thermal shutdown threshold 155
Thermal shutdown threshold in
135 °C
current-limit
Hysteresis
(2)
20
(2) These parameters are provided for reference only and do not constitute part of TI's published device specifications for purposes of TI's
product warranty.
(3) Pulse-testing techniques maintain junction temperature close to ambient temperature; Thermal effects must be taken into account
separately.
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