Datasheet

 
 
SLVS485 − AUGUST 2003
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3
ELECTRICAL CHARACTERISTICS
V
IN
= 3.8 V, V
O
= 3.3 V, EN = V
IN
, T
A
= −40°C to 85°C (unless otherwise noted)
SUPPLY CURRENT
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
I
Input voltage range 1.8 6.5 V
I
(Q)
Operating quiescent current I
O
= 0 mA 20 35 µA
I
(SD)
Shutdown current EN = V
I
0.1 1 µA
OUTPUT/CURRENT LIMIT
V
O
Adjustable output voltage range V
FB
V
I
V
V
FB
Feedback voltage 1.213 V
Feedback leakage current 0.01 0.2 µA
Feedback voltage tolerance −2 +2 %
V
(ISENSE)
Reference voltage for current limit 90 105 120 mV
ISENSE leakage current 0.01 0.2 µA
Line regulation Measured with circuit according to Figure 1 0.6 %/V
Load regulation
Measured with circuit according to Figure 1
V
I
= 3.8 V
0.6 %/A
η
Efficiency
Measured with circuit according to Figure 1
V
I
= 3.8 V, V
O
= 3.3 V, I
O
= 1000 mA
94%
η
Efficiency
Measured with circuit according to Figure 1
V
I
= 3.8 V, V
O
= 1.2 V, I
O
= 800 mA
80%
Start-up time
I
O
= 0 mA, Time from active EN to V
O,
C
O
= 47 µF
0.25 ms
GATE DRIVER (SW-PIN)
r
DS(ON)
P-channel MOSFET on-resistance
V
I
≥ 2.5 V 4
Ω
r
DS(ON)
P-channel MOSFET on-resistance
V
I
= 1.8 V 6
Ω
r
DS(ON)
N-channel MOSFET on-resistance
V
I
≥ 2.5 V 4
Ω
r
DS(ON)
N-channel MOSFET on-resistance
V
I
= 1.8 V 6
Ω
I
O
Maximum gate drive output current, SW 150 mA
ENABLE
V
IH
EN high level input voltage Device is off 1.3 V
V
IL
EN low level input voltage Device is operating 0.3 V
EN trip point hysteresis 115 mV
I
lkg
EN input leakage current EN = GND or VIN 0.01 0.2 µA
V
(UVLO)
Undervoltage lockout threshold 1.7 V
ON TIME and OFF TIME
t
on
Minimum on time
TPS64200, TPS64201, TPS64202 1.36 1.6 1.84
s
t
on
Minimum on time
TPS64203 only 0.56 0.65 0.74
µ
s
Reduced on time 1 TPS64201,TPS64202 0.80 µs
Reduced on time 2 TPS64201,TPS64202 0.40 µs
Reduced on time 3 TPS64201,TPS64202 0.20 µs
t
off
Minimum off time
TPS64200,TPS64201, TPS64203 0.44 0.55 0.66
s
t
off
Minimum off time
TPS64202 only 0.24 0.3 0.36
µ
s