Datasheet

TPS54140A
www.ti.com SLVSB55B –MAY 2012–REVISED JANUARY 2014
THERMAL INFORMATION
TPS54140A
THERMAL METRIC
(1)(2)
UNITS
DGQ (10-PIN) DRC (10 PINS)
θ
JA
Junction-to-ambient thermal resistance (standad board) 62.5 40
θ
JCtop
Junction-to-case (top) thermal resistance 83 65
θ
JB
Junction-to-board thermal resistance 28 8
°C/W
ψ
JT
Junction-to-top characterization parameter 1.7 0.6
ψ
JB
Junction-to-board characterization parameter 20.1 7.5
θ
JCbot
Junction-to-case (bottom) thermal resistance 21 7.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator .
ELECTRICAL CHARACTERISTICS
T
J
= –40°C to 150°C, VIN = 3.5 to 42V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage 3.5 42 V
Internal undervoltage lockout
No voltage hysteresis, rising and falling 2.5 V
threshold
Shutdown supply current EN = 0 V, 25°C, 3.5 V ≤ VIN ≤ 42 V 1.3 4
μA
Operating : nonswitching supply
VSENSE = 0.83 V, VIN = 12 V, 25°C 116 136
current
ENABLE AND UVLO (EN PIN)
Enable threshold voltage No voltage hysteresis, rising and falling 1.11 1.25 1.36 V
Enable threshold +50 mV –3.8
Input current μA
Enable threshold –50 mV –0.9
Hysteresis current 1.91 2.95 3.99 μA
VOLTAGE REFERENCE
T
J
= 25°C 0.792 0.8 0.808
Voltage reference V
0.784 0.8 0.816
HIGH-SIDE MOSFET
VIN = 3.5 V, BOOT-PH = 3 V 300
On-resistance mΩ
VIN = 12 V, BOOT-PH = 6 V 200 410
ERROR AMPLIFIER
Input current 50 nA
Error amplifier transconductance (g
M
) ±2 μA < I
(COMP)
< 2 μA, V
(COMP)
= 1 V 97 μMhos
±2 μA < I
(COMP)
< 2 μA, V
(COMP)
= 1 V,
Error amplifier transconductance (g
M
)
26 μMhos
during slow start
VSENSE = 0.4 V
Error amplifier dc gain VSENSE = 0.8 V 10,000 V/V
Error amplifier bandwidth 2700 kHz
Error amplifier source/sink V
(COMP)
= 1 V, 100 mV overdrive ±7 μA
COMP to switch current
6 A/V
transconductance
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