Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp Multi-purpose SOIC 8

      

    

   

SLOS220J − JULY 1998 − REVISED FEBRUARY 2004

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D Rail-to-Rail Output Swing

D Gain Bandwidth Product . . . 6.4 MHz

D ±80 mA Output Drive Capability

D Supply Current . . . 500 µA/channel

D Input Offset Voltage . . . 100 µV

D Input Noise Voltage ...11 nV/√Hz

D Slew Rate . . . 1.6 V/µs

D Micropower Shutdown Mode

(TLV2460/3/5) . . . 0.3 µA/Channel

D Universal Operational Amplifier EVM

D Available in Q-Temp Automotive

HighRel Automotive Applications

Configuration Control/Print Support

Qualification to Automotive Standards

description

The TLV246x is a family of low-power rail-to-rail input/output operational amplifiers specifically designed for

portable applications. The input common-mode voltage range extends beyond the supply rails for maximum

dynamic range in low-voltage systems. The amplifier output has rail-to-rail performance with high-output-drive

capability, solving one of the limitations of older rail-to-rail input/output operational amplifiers. This rail-to-rail

dynamic range and high output drive make the TLV246x ideal for buffering analog-to-digital converters.

The operational amplifier has 6.4 MHz of bandwidth and 1.6 V/µs of slew rate with only 500 µA of supply current,

providing good ac performance with low power consumption. Three members of the family offer a shutdown

terminal, which places the amplifier in an ultralow supply current mode (I

= 0.3 µA/ch). While in shutdown,

the operational-amplifier output is placed in a high-impedance state. DC applications are also well served with

an input noise voltage of 11 nV/√Hz and input offset voltage of 100 µV.

This family is available in the low-profile SOT23, MSOP, and TSSOP packages. The TLV2460 is the first

rail-to-rail input/output operational amplifier with shutdown available in the 6-pin SOT23, making it perfect for

high-density circuits. The family is specified over an expanded temperature range (T

= −40°C to 125°C) for

use in industrial control and automotive systems, and over the military temperature range

= −55°C to 125°C) for use in military systems.

SELECTION GUIDE

DEVICE

[V]

[µV]

/ch

[µA]

[pA]

GBW

[MHz]

SLEW RATE

[V/µs]

kHz

[nV/√Hz

]

[mA]

SHUTDOWN RAIL-RAIL

TLV246x(A) 2.7−6 150 550 1300 6.4 1.6 11 25 Y I/O

TLV277x(A) 2.5−5.5 360 1000 2 5.1 10.5 17 6 Y O

TLV247x(A) 2.7−6 250 600 2.5 2.8 1.5 15 20 Y I/O

TLV245x(A) 2.7−6 20 23 500 0.22 0.11 52 10 Y I/O

TLV225x(A) 2.7−8 200 35 1 0.2 0.12 19 3 — —

TLV226x(A) 2.7−8 300 200 1 0.71 0.55 12 3 — —

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications o

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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(TOP VIEW)

OUT

GND

IN+

DD+

IN−

TLV2460

DBV PACKAGE

SHDN

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Device TLV2465A is Obsolete

Summary of content (74 pages)

PAGE 1
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 D D D D D D D D D D TLV2460 DBV PACKAGE (TOP VIEW) Rail-to-Rail Output Swing Gain Bandwidth Product . . . 6.4 MHz ± 80 mA Output Drive Capability Supply Current . . . 500 µA/channel Input Offset Voltage . . . 100 µV Input Noise Voltage . . . 11 nV/√Hz Slew Rate . . . 1.
PAGE 2
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TLV2460C/I/AI and TLV2461C/I/AI AVAILABLE OPTIONS PACKAGED DEVICES SOT-23† SYMBOL (DBV) TA VIOmax AT 25°C 0°C to 70°C 2000 µV TLV2460CD TLV2461CD TLV2460CDBV TLV2461CDBV VAOC VAPC TLV2460CP TLV2461CP 2000 µV TLV2460ID TLV2461ID TLV2460IDBV TLV2461IDBV VAOI VAPI TLV2460IP TLV2461I
PAGE 3
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TLV2462M/AM/Q/AQ and TLV2463M/AM/Q/AQ AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C SMALL OUTLINE† (D) SMALL OUTLINE† (PW) CERAMIC DIP (JG) CERAMIC DIP (J) CERAMIC FLATPACK (U) CHIP CARRIER (FK) 2000 µV TLV2462QD TLV2463QD TLV2462QPW TLV2463QPW — — — — — — — — 1500 µV TL
PAGE 4
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TLV246x PACKAGE PINOUTS(1) TLV2460 DBV PACKAGE (TOP VIEW) OUT GND IN+ 1 2 3 6 5 4 VDD+ SHDN IN − TLV2461 D, P, JG, OR PW PACKAGE (TOP VIEW) NC IN − IN + GND 1 8 2 7 3 6 4 5 TLV2460 D, P, JG, OR PW PACKAGE (TOP VIEW) TLV2461 DBV PACKAGE (TOP VIEW) NC VDD+ OUT NC OUT GND IN+ 1
PAGE 5
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TLV246x PACKAGE PINOUTS (continued)(1) TLV2461 U PACKAGE (TOP VIEW) 4 18 NC IN− 5 17 VDD IN− 5 17 VDD NC 6 16 NC NC 6 16 NC IN+ 7 15 OUT IN+ 7 NC 8 14 NC NC 8 1IN+ 4 18 2IN− NC 5 17 NC GND 6 16 2IN+ 2OUT 18 2IN− NC 5 17 NC GND 6 16 2IN+ 15 OUT NC 7 1
PAGE 6
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Differential input voltage, VID . . . . .
PAGE 7
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 recommended operating conditions MIN Single supply Supply voltage, VDD Split supply 2.7 6 ±3 0 V °C C 0 VDD 70 I-suffix and Q-suffix −40 125 M-suffix −55 125 C-suffix VIH VIL Shutdown on/off voltage level‡ UNIT ±1.
PAGE 8
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS ci(c) Common-mode input capacitance f = 10 kHz zo Closed-loop output impedance f = 100 kHz, CMRR kSVR Common-mode rejection ratio Supply voltage re
PAGE 9
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER VIO αVIO IIO IIB Input offset voltage Temperature coefficient of input offset voltage Input offset current Input bias current TEST CONDITIONS TA† 25°C MIN VDD = 5 V, VIC = 2.
PAGE 10
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 operating characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER SR Slew rate at unity gain Vn Equivalent input noise voltage In THD + N t(on) t(off) TEST CONDITIONS VO(PP) = 2 V, RL = 10 kΩ CL = 160 pF, TA† 25°C Full range 0.9 1.
PAGE 11
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS Table of Graphs FIGURE VIO IIB Input offset voltage vs Common-mode input voltage 1, 2 Input bias current vs Free-air temperature 3, 4 IIO VOH Input offset current vs Free-air temperature 3, 4 High-level output voltage vs High-level output current 5, 6 VOL
PAGE 12
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS INPUT OFFSET VOLTAGE vs COMMON-MODE INPUT VOLTAGE INPUT OFFSET VOLTAGE vs COMMON-MODE INPUT VOLTAGE 1 0.6 0.4 0.2 0 −0.2 −0.4 −0.6 −0.8 −1 0 VDD = 5 V TA = 25°C 0.8 VIO − Input Offset Voltage − mV VIO − Input Offset Voltage − mV 0.8 1 VDD = 3 V TA = 25°C 0.
PAGE 13
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT 3 5 VDD = 5 VDC 4.5 2.5 VOH − High-Level Output Voltage − V VOH − High-Level Output Voltage − V VDD = 3 VDC TA = −55°C 2 1.
PAGE 14
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS PEAK-TO-PEAK OUTPUT VOLTAGE vs FREQUENCY PEAK-TO-PEAK OUTPUT VOLTAGE vs FREQUENCY 5.5 VDD = 3 V AV = −10 THD = 1% RL = 10 kΩ 2.5 VO(PP) − Peak-to-Peak Output Voltage − V VO(PP) − Peak-to-Peak Output Voltage − V 3 2 1.5 1 0.
PAGE 15
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS OPEN-LOOP GAIN AND PHASE vs FREQUENCY 100 VDD = ±2.
PAGE 16
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS OUTPUT IMPEDANCE vs FREQUENCY 1000 OUTPUT IMPEDANCE vs FREQUENCY 1000 VDD = ±1.5 V TA = 25°C 100 Zo − Output Impedance − Ω Zo − Output Impedance − Ω 100 10 AV = 100 1 AV = 10 0.1 VDD = ±2.5 V TA = 25°C AV = 1 10 AV = 100 1 AV = 10 0.1 AV = 1 0.
PAGE 17
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS SUPPLY-VOLTAGE REJECTION RATIO vs FREQUENCY SUPPLY-VOLTAGE REJECTION RATIO vs FREQUENCY 90 +kSVR VDD = ±1.
PAGE 18
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS AMPLIFIER WITH A SHUTDOWN PULSE TURNON CHARACTERISTICS AMPLIFIER WITH A SHUTDOWN PULSE TURNOFF CHARACTERISTICS 5 5 4 Shutdown Pin 3 2 1 0 Amplifier Output 3 2 1 0 −5 VDD = 5 V RL = 10 kΩ AV = 1 TA = 25°C Shutdown Pin 3 VSD − Shutdown Voltage − V VSD − Shutdow
PAGE 19
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS TURNOFF SUPPLY CURRENT WITH A SHUTDOWN PULSE 1 5.5 4.5 0.6 0.4 3.5 Supply Current 2.5 0.2 1.5 0 0.5 −0.2 −0.4 −0.2 0 0.2 VSD − Shutdown Voltage − V Shutdown Pin 0.8 I DD − Supply Current − mA VDD = 5 V VI = 2.5 V AV = 1 TA = 25°C −0.5 0.6 0.
PAGE 20
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY 18 VDD = 3 V AV = 10 VI = 1.
PAGE 21
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION vs FREQUENCY 1 VDD = ±1.5 V VO(PP) = 2 V RL = 10 kΩ THD − Total Harmonic Distortion − % THD − Total Harmonic Distortion − % 0.5 TOTAL HARMONIC DISTORTION vs FREQUENCY AV = 100 0.1 AV = 10 0.010 0.001 AV = 1 10 100 1k 10k 0.
PAGE 22
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS PHASE MARGIN vs LOAD CAPACITANCE PHASE MARGIN vs FREE-AIR TEMPERATURE 90 80 RL = 10 kΩ CL = 160 pF 55 70 φ m − Phase Margin − degrees φ m − Phase Margin − degrees 60 VDD = ±2.
PAGE 23
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS LARGE SIGNAL FOLLOWER LARGE SIGNAL FOLLOWER 2.2 3.7 2 3.3 VO − Voltage − V Input VO − Voltage − V Input 1.8 Output 1.6 1.4 VDD = 3 V VI(PP) = 1 V VI = 1.5 V RL = 10 kΩ CL = 160 pF AV = 1 TA = 25°C 1.2 1 0.8 −2 0 2 4 6 Input 2.9 Output 2.
PAGE 24
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 TYPICAL CHARACTERISTICS INVERTING LARGE SIGNAL INVERTING LARGE SIGNAL 4 2.3 Input 2.1 Input 3.5 VDD = 3 V VI(PP) = 1 V VI = 1.5 V RL = 10 kΩ CL = 160 pF AV = −1 TA = 25°C 1.7 1.5 1.3 VO − Voltage − V VO − Voltage − V 1.9 1.1 VDD = 5 V VI(PP) = 2 V VI = 2.
PAGE 25
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 PARAMETER MEASUREMENT INFORMATION Rnull _ + RL CL Figure 48 APPLICATION INFORMATION driving a capacitive load When the amplifier is configured in this manner, capacitive loading directly on the output will decrease the device’s phase margin leading to high frequency ringing or oscillation
PAGE 26
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 APPLICATION INFORMATION general configurations When receiving low-level signals, limiting the bandwidth of the incoming signals into the system is often required. The simplest way to accomplish this is to place an RC filter at the noninverting terminal of the amplifier (see Figure 51).
PAGE 27
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 APPLICATION INFORMATION shutdown function Three members of the TLV246x family (TLV2460/3/5) have a shutdown terminal for conserving battery life in portable applications. When the shutdown terminal is tied low, the supply current is reduced to 0.
PAGE 28
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 APPLICATION INFORMATION general power dissipation considerations For a given θJA, the maximum power dissipation is shown in Figure 53 and is calculated by the following formula: P D + Where: ǒ T Ǔ –T MAX A q JA PD = Maximum power dissipation of THS246x IC (watts) TMAX = Absolute maxim
PAGE 29
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 APPLICATION INFORMATION macromodel information Macromodel information provided was derived using Microsim Parts Release 8, the model generation software used with Microsim PSpice .
PAGE 30
Device TLV2465A is Obsolete SLOS220J − JULY 1998 − REVISED FEBRUARY 2004 macromodel information (continued) rp 3 71 8.9127 rss 10 99 10.610E6 rs1 6 4 1G rs2 6 4 1G rs3 6 4 1G rs4 6 4 1G s1 71 4 6 4 s1x s2 70 5 6 4 s1x s3 10 74 6 4 s1x s4 74 4 6 4 s2x vb 9 0 dc 0 vc 3 53 dc .7836 ve 54 4 dc .7436 vlim 7 8 dc 0 vlp 91 0 dc 117 vln 0 92 dc 117 .model dx D(Is=800.
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PACKAGE OPTION ADDENDUM www.ti.com 31-Oct-2013 (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device.
PAGE 46
PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device TLV2460AIDR Package Package Pins Type Drawing SOIC SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) D 8 2500 330.0 12.4 6.4 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 5.2 2.1 8.0 12.0 Q1 TLV2460AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TLV2460CDBVR SOT-23 DBV 6 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.
PAGE 47
PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) TLV2461IDBVT SOT-23 DBV 5 250 180.0 9.0 3.15 TLV2461IDBVT SOT-23 DBV 5 250 178.0 9.0 3.23 TLV2461IDR SOIC D 8 2500 330.0 12.4 6.4 TLV2461IDR SOIC D 8 2500 330.0 12.4 6.4 TLV2462AIDR SOIC D 8 2500 330.0 12.4 TLV2462CDGKR VSSOP DGK 8 2500 330.0 TLV2462CDGKR VSSOP DGK 8 2500 330.
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PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TLV2460AIDR SOIC D 8 2500 367.0 367.0 35.0 TLV2460AIDR SOIC D 8 2500 340.5 338.1 20.6 TLV2460CDBVR SOT-23 DBV 6 3000 180.0 180.0 18.0 TLV2460CDBVT SOT-23 DBV 6 250 180.0 180.0 18.0 TLV2460CDR SOIC D 8 2500 340.5 338.1 20.6 TLV2460IDBVR SOT-23 DBV 6 3000 180.0 180.0 18.
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PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TLV2461IDR SOIC D 8 2500 367.0 367.0 35.0 TLV2461IDR SOIC D 8 2500 340.5 338.1 20.6 TLV2462AIDR SOIC D 8 2500 340.5 338.1 20.6 TLV2462CDGKR VSSOP DGK 8 2500 358.0 335.0 35.0 TLV2462CDGKR VSSOP DGK 8 2500 364.0 364.0 27.0 TLV2462CDR SOIC D 8 2500 340.5 338.1 20.6 TLV2462IDGKR VSSOP DGK 8 2500 358.0 335.0 35.
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MECHANICAL DATA MCER001A – JANUARY 1995 – REVISED JANUARY 1997 JG (R-GDIP-T8) CERAMIC DUAL-IN-LINE 0.400 (10,16) 0.355 (9,00) 8 5 0.280 (7,11) 0.245 (6,22) 1 0.063 (1,60) 0.015 (0,38) 4 0.065 (1,65) 0.045 (1,14) 0.310 (7,87) 0.290 (7,37) 0.020 (0,51) MIN 0.200 (5,08) MAX Seating Plane 0.130 (3,30) MIN 0.023 (0,58) 0.015 (0,38) 0°–15° 0.100 (2,54) 0.014 (0,36) 0.008 (0,20) 4040107/C 08/96 NOTES: A. B. C. D. E. All linear dimensions are in inches (millimeters).
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.