Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp J-FET SOIC 8

TL03x, TL03xA

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D Direct Upgrades for the TL06x Low-Power

BiFETs

D Low Power Consumption...

6.5 mW/Channel Typ

D On-Chip Offset-Voltage Trimming for

Improved DC Performance

(1.5 mV, TL031A)

D Higher Slew Rate and Bandwidth Without

Increased Power Consumption

D Available in TSSOP for Small Form-Factor

Designs

description

The TL03x series of JFET-input operational amplifiers offer improved dc and ac characteristics over the TL06x

family of low-power BiFET operational amplifiers. On-chip zener trimming of offset voltage yields precision

grades as low as 1.5 mV (TL031A) for greater accuracy in dc-coupled applications. The Texas Instruments

improved BiFET process and optimized designs also yield improved bandwidths and slew rates without

increased power consumption. The TL03x devices are pin-compatible with the TL06x and can be used to

upgrade existing circuits or for optimal performance in new designs.

BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors without

sacrificing the output drive associated with bipolar amplifiers. This higher input impedance makes the TL3x

amplifiers better suited for interfacing with high-impedance sensors or very low-level ac signals. These devices

also feature inherently better ac response than bipolar or CMOS devices having comparable power

consumption.

The TL03x family has been optimized for micropower operation, while improving on the performance of the

TL06x series. Designers requiring significantly faster ac response should consider the Excalibur™ TLE206x

family of low-power BiFET operational amplifiers.

Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to

observe common-mode input-voltage limits and output swing when operating from a single supply. DC biasing

of the input signal is required, and loads should be terminated to a virtual-ground node at midsupply. The TI

TLE2426 integrated virtual-ground generator is useful when operating BiFET amplifiers from single supplies.

The TL03x devices are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply

systems, the TI LinCMOS families of operational amplifiers (TLC prefix) are recommended. When moving from

BiFET to CMOS amplifiers, particular attention should be paid to slew rate, bandwidth requirements, and output

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized

for operation from −40°C to 85°C. The M-suffix devices are characterized for operation over the full military

temperature range of −55°C to 125°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Excalibur is a trademark of Texas Instruments.

Summary of content (74 pages)

PAGE 1
TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 D Direct Upgrades for the TL06x Low-Power D D BiFETs Low Power Consumption . . . 6.5 mW/Channel Typ On-Chip Offset-Voltage Trimming for Improved DC Performance (1.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032x, TL032Ax D, JG, OR P PACKAGE (TOP VIEW) 1 8 2 7 3 6 4 5 NC VCC+ OUT OFFSET N2 1OUT 1IN− 1IN+ VCC − TL031M, TL031AM FK PACKAGE (TOP VIEW) 5 17 6 16 7 8 15 14 9 10 11 12 13 7 3 6 4 5 VCC+ 2OUT 2IN− 2IN+ NC 1OUT NC VCC+ NC NC VCC+ NC OUT NC NC 1IN− NC 1IN+ NC 4 3 2 1 20 19 18 5 17 6 16 7 15 8 14 9 10 11 12 13 NC 2OUT NC 2IN− NC NC − No internal co
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 AVAILABLE OPTIONS PACKAGED DEVICES TA 0°C to 70°C −40°C to 85°C −55°C to 125°C VIOMAX AT 25°C SMALL OUTLINE (D) CHIP CARRIER (FK) CERAMIC DIP (J) CERAMIC DIP (JG) PLASTIC DIP (N) PLASTIC DIP (P) TSSOP (PW) 0.8 mV TL031ACD TL032ACD — — — — TL031ACP TL032ACP — 1.5 mV TL031CD TL032CD TL034ACD — — — TL034ACN TL031CP TL032CP — 4 mV TL034CD — — — TL034CN 0.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 symbol (each amplifier) IN− − IN+ + OUT equivalent schematic (each amplifier) VCC+ Q5 Q14 Q2 D1 Q3 R4 Q6 IN+ IN− JF1 Q11 OUT Q8 Q10 JF2 R7 Q17 R3 Q15 R6 C1 Q1 Q4 See Note A OFFSET N1 OFFSET N2 Q12 JF3 Q9 R8 Q7 R1 R2 Q16 R5 Q13 VCC− NOTE A: OFFSET N1 and OFFSET N2 are available only on the TL031, TL031A.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage (see Note 1): VCC+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V VCC− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031C and TL031AC electrical characteristics at specified free-air temperature TL031C, TL031AC PARAMETER TA TEST CONDITIONS VCC± = ±5 V MIN 25°C VIO Input offset voltage VO = 0, VIC = 0, 0 RS = 50 Ω VO = 0, VIC = 0 See Figure 5 25°C 1 100 1 100 70°C 9 200 12 200 VO = 0, VIC = 0 See Figure 5 25°C 2 200 2 200 70°C 50 400 80 400 −1.5 to 4 Full range† −1.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031C and TL031AC electrical characteristics at specified free-air temperature (continued) TL031C, TL031AC PARAMETER TEST CONDITIONS VCC± = ±5 V TA MIN PD ICC Total power dissipation Supply pp y current VO = 0, No load VO = 0,, No load VCC± = ±15 V TYP MAX 25°C 1.9 MIN UNIT TYP MAX 2.5 6.5 8.4 0°C 1.8 2.5 6.3 8.4 70°C 1.9 2.5 6.3 8.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031I and TL031AI electrical characteristics at specified free-air temperature TL031I, TL031AI PARAMETER TA TEST CONDITIONS VCC± = ±5 V MIN TYP 25°C VIO Input offset voltage VO = 0, 0, VIC = 0 RS = 50 Ω TL031I 0.54 Full range† MIN 3.5 TYP 0.5 5.3 25°C TL031AI VCC± = ±15 V MAX 0.41 Full range† UNIT MAX 1.5 3.3 2.8 0.34 4.6 0.8 mV 2.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031I and TL031AI electrical characteristics at specified free-air temperature (continued) TL031I, TL031AI PARAMETER TEST CONDITIONS VCC± = ±5 V TA MIN PD ICC Total power dissipation Supply pp y current VO = 0, No load VO = 0,, No load VCC± = ±15 V TYP MAX MIN UNIT TYP MAX 25°C 1.9 2.5 6.5 8.4 −40°C 1.4 2.5 5.4 8.4 85°C 1.9 2.5 6.2 8.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031M and TL031AM electrical characteristics at specified free-air temperature TL031M, TL031AM PARAMETER TA TEST CONDITIONS VCC± = ±5 V MIN 25°C VIO aV Input offset voltage Temperature coefficient of IO input offset voltage VO = 0, VIC = 0 0, RS = 50 Ω VO = 0, VIC = 0 0, RS = 50 Ω TL031M Full MAX 0.54 3.5 range† MIN 0.41 Full range† UNIT TYP MAX 0.5 1.5 6.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL031M and TL031AM electrical characteristics at specified free-air temperature (continued) TL031M, TL031AM PARAMETER TEST CONDITIONS TA VCC± = ±5 V MIN MAX 192 −55°C 125°C 25°C ICC Supply pp y current VO = 0,, No load VCC± = ±15 V TYP MIN UNIT TYP MAX 250 217 280 114 250 156 280 178 250 197 280 μA μ TL031M and TL031AM operating characteristics at specified f
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032C and TL032AC electrical characteristics at specified free-air temperature TL032C, TL032AC PARAMETER TA TEST CONDITIONS VCC± = ±5 V MIN 25°C VIO Input offset voltage TL032C VO = 0, VIC = 0 0, RS = 50 Ω TL032AC Full range† 0.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032C and TL032AC electrical characteristics at specified free-air temperature (continued) TL032C, TL032AC PARAMETER TEST CONDITIONS VCC± = ±5 V TA MIN Total T t l power dissipation di i ti (two amplifiers) PD VO = 0, No load ICC Supply current (two amplifiers) 0, VO = 0 VO1/VO2 Crosstalk attenuation AVD = 100 dB No load VCC± = ±15 V TYP MAX 25°C 3.8 0°C 3.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032I and TL032AI electrical characteristics at specified free-air temperature TL032I, TL032AI PARAMETER TA TEST CONDITIONS VCC± = ±5 V MIN 25°C VIO aV IO IIO Input offset voltage Temperature coefficient ffi i t off input i t offset voltage VO = 0, 0, VIC = 0 RS = 50 Ω Input offset voltage long-term drift‡ VO = 0, VIC = 0, RS = 50 Ω Input offset current VO = 0, See Figure
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032I and TL032AI electrical characteristics at specified free-air temperature (continued) TL032I, TL032AI PARAMETER TEST CONDITIONS VCC± = ±5 V TA MIN PD ICC VO1/VO2 Total power dissipation (two amplifiers) VO = 0, Supply S l currentt (two amplifiers) VO = 0, Crosstalk attenuation No load No load AVD = 100 dB VCC± = ±15 V TYP MAX MIN UNIT TYP MAX 25°C 3.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032M and TL032AM electrical characteristics at specified free-air temperature TL032M, TL032AM PARAMETER TEST CONDITIONS TA VCC± = ±5 V MIN 25°C VIO aV IO IIO Input offset voltage Temperature coefficient of input offset voltage VO = 0, 0, VIC = 0 RS = 50 Ω Input offset voltage long-term drift‡ VO = 0, VIC = 0, RS = 50 Ω Input offset current VO = 0, See Figure 5 IIB Input
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL032M and TL032AM electrical characteristics at specified free-air temperature (continued) TL032M, TL032AM PARAMETER TEST CONDITIONS TA VCC± = ±5 V MIN PD ICC VO1/VO2 Total power dissipation (two amplifiers) VO = 0, VO = 0, Supply S l currentt (two amplifiers) VO = 0, Crosstalk attenuation No load No load AVD = 100 dB VCC± = ±15 V TYP MAX MIN UNIT TYP MAX 25°C 3.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034C and TL034AC electrical characteristics at specified free-air temperature TL034C, TL034AC PARAMETER TEST CONDITIONS TA VCC± = ±5 V MIN TYP 25°C VIO Input offset voltage VO = 0, 0, VIC = 0 RS = 50 Ω TL034C 0.91 Full range† MIN 6 TYP 0.79 8.2 25°C TL034AC VCC± = ±15 V MAX 0.7 Full range† UNIT MAX 4 6.2 3.5 0.58 5.7 1.5 3.7 TL034C 25°C to 70°C 11.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034C and TL034AC electrical characteristics at specified free-air temperature (continued) TL034C, TL034AC PARAMETER TEST CONDITIONS VCC± = ±5 V TA MIN Total T t l power dissipation di i ti (two amplifiers) PD Supply S l currentt (four (f amplifiers) ICC VO1/VO2 Crosstalk attenuation VO = 0, No load VO = 0, No load AVD = 100 VCC± = ±15 V TYP MAX 25°C 7.7 0°C 7.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034I and TL034AI electrical characteristics at specified free-air temperature TL034I, TL034AI PARAMETER TA TEST CONDITIONS VCC± = ±5 V MIN 25°C VIO Input offset voltage VO = 0, VIC = 0, 0 RS = 50 Ω TL034I MAX 0.91 3.6 Full range† MIN TYP 0.79 9.3 25°C TL034AI VCC± = ±15 V TYP 0.7 Full range† UNIT MAX 4 7.3 3.5 0.58 6.8 1.5 mV 4.8 TL034I 25°C to 85°C 11.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034I and TL034AI electrical characteristics at specified free-air temperature (continued) TL034I, TL034AI PARAMETER TEST CONDITIONS TA VCC± = ±5 V MIN Total T t l power dissipation di i ti (four amplifiers) PD Supply S l currentt (four amplifiers) ICC VO1/VO2 Crosstalk attenuation VO = 0, No load VO = 0, No load AVD = 100 VCC± = ±15 V TYP MAX MIN UNIT TYP MAX 25°C 7.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034M and TL034AM electrical characteristics at specified free-air temperature TL034M, TL034AM PARAMETER TA TEST CONDITIONS VCC± = ±5 V MIN 25°C VIO Input offset voltage VO = 0, VIC = 0, 0 RS = 50 Ω TL034M MAX 0.91 3.6 Full range† MIN 0.7 Full range† UNIT TYP MAX 0.78 4 0.58 1.5 11 25°C TL034AM VCC± = ±15 V TYP 9 3.5 8.5 mV 6.5 TL034M 25°C to 125°C 10.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TL034M and TL034AM electrical characteristics at specified free-air temperature (continued) TL034M, TL034AM PARAMETER TEST CONDITIONS VCC± = ±5 V TA MIN Total T t l power dissipation di i ti (two amplifiers) PD Supply S l currentt (two amplifiers) ICC VO1/VO2 Crosstalk attenuation VO = 0, No load VO = 0, No load AVD = 100 VCC± = ±15 V TYP MAX MIN UNIT TYP MAX 25°C 7
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 PARAMETER MEASUREMENT INFORMATION VCC+ − + VI Overshoot VO 90% VCC− CL (see Note A) RL 10% tr NOTE A: CL includes fixture capacitance. Figure 1. Slew-Rate and Overshoot Test Circuit Figure 2. Rise Time and Overshoot Waveform 10 kΩ VCC+ 10 kΩ − 100 Ω VO + VI VCC+ VCC− − VO CL (see Note A) RL VCC− RS RS NOTE A: CL includes fixture capacitance. Figure 4.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 PARAMETER MEASUREMENT INFORMATION typical values Typical values presented in this data sheet represent the median (50% point) of device parametric performance. input bias and offset current At the picoampere bias current level typical of the TL03x and TL03xA, accurate measurement of the bias current becomes difficult.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS Table of Graphs FIGURE Distribution of TL03x input offset voltage 6−11 Distribution of TL03x input offset-voltage temperature coefficient Input bias current vs Common-mode input voltage 15 Input bias current and input offset current vs Free-air temperature 16 Common-mode input voltage vs Supply voltage 17 Common-mode input voltage vs Free-air temperature O
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS DISTRIBUTION OF TL031 INPUT OFFSET VOLTAGE Percentage of Units − % 12 10 ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 16 1681 Units Tested From 1 Wafer Lot VCC± = ±15 V TA = 25°C P Package 14 Percentage of Units − % 14 DISTRIBUTION OF TL031A INPUT OFFSET VOLTAGE 8 6 4 2 0 12 10 1433 Units Tested From 1 Wafer Lot VCC± = ±15 V TA = 25°C P Package ÎÎÎÎÎ ÎÎ
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS DISTRIBUTION OF TL034 INPUT OFFSET VOLTAGE 9 ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ 1681 Amplifiers Tested From 1 Wafer Lot VCC± = ±15 V TA = 25°C D Package 6 3 0 −1.2 −0.6 0 0.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS DISTRIBUTION OF TL034 INPUT OFFSET-VOLTAGE TEMPERATURE COEFFICIENT 25 ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ 10 160 Amplifiers Tested From 2 Wafer Lots VCC± = ±15 V TA = 25°C to 125°C D Package VCC± = ±15 V TA = 25°C IIB I IB − Input Bias Current − nA Percentage of Amplifiers − % 30 INPUT BIAS CURRENT vs COMMON-MODE INPUT VOLTAGE 20 15 10 5 0 −5 5 0 −40
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS OUTPUT VOLTAGE vs DIFFERENTIAL INPUT VOLTAGE COMMON-MODE INPUT VOLTAGE† vs FREE-AIR TEMPERATURE 20 15 ÎÎÎÎÎ Positive Limit 10 RL = 1 kΩ RL = 2 kΩ RL = 5 kΩ RL = 10 kΩ RL = 20 kΩ 1 5 0 −5 ÁÁÁ ÁÁÁ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ 1.5 VO − Output Voltage − V VIC V IC − Common-Mode Input Voltage − V VCC± = ±15 V 0.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS MAXIMUM PEAK OUTPUT VOLTAGE vs OUTPUT CURRENT ÎÎÎÎÎ ÎÎÎÎÎ 30 5 |VOM | − Maximum Peak Output Voltage − V VO(PP) VOPP − Maximum Peak-to-Peak Output Voltage − V MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE† vs FREQUENCY RL = 10 kΩ VCC± = ±15 V 25 20 15 TA = −55°C 10 TA = 125°C VCC± = ±5 V ÁÁ ÁÁ ÁÁ 5 VOM+ 4 10 k 100 k f − Frequency − Hz 1M VOM− 3 2 1 0 0 1k
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs LOAD RESISTANCE MAXIMUM PEAK OUTPUT VOLTAGE† vs FREE-AIR TEMPERATURE 40 12 VOM+ 35 A VD − Large-Signal Differential Voltage Amplification − V/mV VOM VOM − Maximum Peak Output Voltage − V 16 8 4 0 −4 ÁÁ ÁÁ ÁÁ ÎÎÎÎÎ ÎÎÎÎÎ VCC± = ±15 V RL = 10 kΩ ÎÎÎ ÎÎÎ −8 VOM− −12 −16 −75 −50 −25 0 VO = ±1 V TA =
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION† vs FREE-AIR TEMPERATURE 50 OUTPUT IMPEDANCE vs FREQUENCY ÎÎÎÎ ÎÎÎÎ 200 ÁÁ zzo o − Output Impedence − Ω A VD − Large-Signal Differential Voltage Amplification − V/mV RL = 10 kΩ VCC± = ±15 V 10 VCC± = ±5 V 100 80 60 AVD = 10 40 ÁÁ ÁÁ 1 −75 AVD = 100 AVD = 1 20 VCC± = ±15 V ro (open loop) ≈ 250 Ω TA = 25
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS SUPPLY-VOLTAGE REJECTION RATIO† vs FREE-AIR TEMPERATURE COMMON-MODE REJECTION RATIO† vs FREE-AIR TEMPERATURE 100 kSVR − Supply Voltage Rejection Ratio − dB CMRR − Common-Mode Rejection Ratio − dB 95 VCC± = ±15 V 90 VCC± = ±5 V 85 80 ÎÎÎÎÎ ÎÎÎÎÎ VIC = VICRmin 75 −75 −50 −25 0 25 50 75 100 VCC± = ±5 V to ±15 V 98 96 94 92 90 −75 125 −50 −25 TA
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS TL031 and TL031A EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY SHORT-CIRCUIT OUTPUT CURRENT† vs FREE-AIR TEMPERATURE ÁÁ ÁÁ ÎÎÎÎÎ ÁÁÁÁÁ ÎÎÎÎÎ ÁÁ ÁÁÁÁÁ ÎÎÎÎÎ ÁÁ ÁÁÁÁÁ ÎÎÎÎÎ Vn nV/ Hz V n− Equivalent Input Noise Voltage − nVHz 25 I OS − Short-Circuit Output Current − mA VCC± = ±15 V 20 15 ÎÎÎÎÎ ÎÎÎÎÎ VID = 100 mV 10 5 0 −5 −10 −15 −20 VCC± = ±5 V ÎÎÎÎÎÎ ÎÎÎÎÎ
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ TL031 and TL031A SUPPLY CURRENT† vs SUPPLY VOLTAGE 250 500 VO = 0 No Load VO = 0 No Load IICC CC − Supply Current −Aμ A 200 μA IICC CC − Supply Current − A ÁÁÁ ÁÁÁ TA = 25°C 150 TA = 125°C ÁÁ ÁÁ 400 TA = 25°C 300 ÁÁ ÁÁ ÁÁ 100 TA = −55°C 50 TA = 125°C 200 TA = −55°C 100 0 0 2 4 6 8 10 12 |VCC±| − Supply Voltage − V 14 0 16
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS TL034 and TL034A SUPPLY CURRENT† vs FREE-AIR TEMPERATURE TL032 and TL032A SUPPLY CURRENT† vs FREE-AIR TEMPERATURE ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÎÎÎÎ ÎÎÎÎ ÁÁ ÁÁ VO = 0 No Load VCC± = ±15 V VCC± = ±5 V 300 ÁÁ ÁÁ 200 100 0 −75 −50 −25 0 25 50 75 100 TA − Free-Air Temperature − °C VCC± = ±5 V 600 400 200 0 −75 125 −50 SLEW RATE vs LOAD RESISTANCE 4 ÎÎÎÎÎ ÎÎÎÎÎ
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS SLEW RATE† vs FREE-AIR TEMPERATURE SLEW RATE† vs FREE-AIR TEMPERATURE ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ 6 5 SR− SR − Slew Rate − V/sμ s 5 SR − Slew Rate − V/sμ s 6 VCC± = ±5 V RL = 10 kΩ CL = 100 pF See Figure 1 4 SR− 3 2 SR+ 1 4 3 SR+ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ 2 1 0 −75 −50 −25 0 25 50 75 TA − Free-Air Temperature − °C 100 0 −75 125 VCC± = ±15 V RL =
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS UNITY-GAIN BANDWIDTH† vs FREE-AIR TEMPERATURE UNITY-GAIN BANDWIDTH vs SUPPLY VOLTAGE 1.05 ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ 1.0 0.95 2 4 6 8 10 12 |VCC±|− Supply Voltage − V 14 VI = 10 mV RL = 10 kΩ CL = 25 pF See Figure 4 1.2 VCC+ = ±15 V 1.1 1.0 VCC± = ±5 V 0.9 0.8 −75 0.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 TYPICAL CHARACTERISTICS PHASE MARGIN† vs FREE-AIR TEMPERATURE VOLTAGE-FOLLOWER SMALL-SIGNAL PULSE RESPONSE ÎÎÎÎÎ ÎÎÎÎÎ 67° 16 VCC± = ±15 V 12 V VO O − Output Voltage − mV φ m − Phase Margin 65° 63° VCC± = ±5 V 61° 4 VI = 10 mV RL = 10 kΩ CL = 25 pF See Figure 4 57° VCC± = ±15 V RL = 10 kΩ CL = 100 pF TA = 25°C See Figure 1 0 ÁÁ ÁÁ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ 59° 55° −75 8
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION input characteristics The TL03x and TL03xA are specified with a minimum and a maximum input voltage that, if exceeded at either input, could cause the device to malfunction.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION output characteristics All operating characteristics (except bandwidth and phase margin) are specified with 100-pF load capacitance. The TL03x and TL03xA drive higher capacitive loads; however, as the load capacitance increases, the resulting response pole occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION high-Q notch filter In general, Texas Instruments enhanced-JFET operational amplifiers serve as excellent filters. The circuit in Figure 64 provides a narrow notch at a specific frequency. Notch filters are designed to eliminate frequencies that are interfering with the operation of an application.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION transimpedance amplifier The low-power precision TL03x allows accurate measurement of low currents. The high input impedance and low offset voltage of the TL03xA greatly simplify the design of a transimpedance amplifier. At room temperature, this design achieves 10-bit accuracy with an error of less than 1/2 LSB.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION 4-mA to 20-mA current loops Often, information from an analog sensor must be sent over a distance to the receiving circuitry. For many applications, the most feasible method involves converting voltage information to a current before transmission. The following circuits give two variations of low-power current loops.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION VCC+ = 10 V 100 kΩ R6 TL431 100 kΩ R7 5 V Ref R2 1 MΩ − R1 VI R5 2N3904 + 5 kΩ 3.3 kΩ TL03xA VEE = −5 V R4 5 kΩ 1N4148 R3 80 kΩ RS IO Signal Common 100 Ω RL 50 Ω Figure 66. Three-Wire 4-mA to 20-mA Current Loop VCC+ = 10 V IN OUT LT1019-5 5 V Ref GND 10 μF R2 1 MΩ 8 2 3 4 LTC1044 5 − R1 10 μF + VI 5 kΩ TL03xA R4 R3 R5 2N3904 3.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION low-level light-detector preamplifier Applications that need to detect small currents require high input-impedance operational amplifiers; otherwise, the bias currents of the operational amplifier camouflage the current being monitored. Phototransistors provide a current that is proportional to the light reaching the transistor.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION audio-distribution amplifier This audio-distribution amplifier (see Figure 69) feeds the input signal to three separate output channels. U1A amplifies the input signal with a gain of 10, while U1B, U1C, and U1D serve as buffers to the output channels. The gain response of this circuit is very flat from 20 Hz to 20 kHz.
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TL03x, TL03xA ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOS180C − FEBRUARY 1997 − REVISED DECEMBER 2001 APPLICATION INFORMATION instrumentation amplifier with linear gain adjust The low offset voltage and low power consumption of the TL03x provide an accurate but inexpensive instrumentation amplifier (see Figure 70). This particular configuration offers the advantage that the gain can be linearly set by one resistor: VO = R6 × (VB − VA) R5 Adjusting R6 varies the gain.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 24-Jan-2013 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties.
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PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TL031CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TL032ACDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TL032AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TL032CDR SOIC D 8 2500 330.0 12.4 6.
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PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TL031CDR SOIC D 8 2500 340.5 338.1 20.6 TL032ACDR SOIC D 8 2500 340.5 338.1 20.6 TL032AIDR SOIC D 8 2500 340.5 338.1 20.6 TL032CDR SOIC D 8 2500 340.5 338.1 20.6 TL032CPSR SO PS 8 2000 367.0 367.0 38.0 TL032IDR SOIC D 8 2500 340.5 338.1 20.6 TL034AIDR SOIC D 14 2500 367.0 367.0 38.
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MECHANICAL DATA MCER001A – JANUARY 1995 – REVISED JANUARY 1997 JG (R-GDIP-T8) CERAMIC DUAL-IN-LINE 0.400 (10,16) 0.355 (9,00) 8 5 0.280 (7,11) 0.245 (6,22) 1 0.063 (1,60) 0.015 (0,38) 4 0.065 (1,65) 0.045 (1,14) 0.310 (7,87) 0.290 (7,37) 0.020 (0,51) MIN 0.200 (5,08) MAX Seating Plane 0.130 (3,30) MIN 0.023 (0,58) 0.015 (0,38) 0°–15° 0.100 (2,54) 0.014 (0,36) 0.008 (0,20) 4040107/C 08/96 NOTES: A. B. C. D. E. All linear dimensions are in inches (millimeters).
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.