Datasheet

LPC662
Low Power CMOS Dual Operational Amplifier
General Description
The LPC662 CMOS Dual operational amplifier is ideal for
operation from a single supply. It features a wide range of
operating voltage from +5V to +15V, rail-to-rail output swing
in addition to an input common-mode range that includes
ground. Performance limitations that have plagued CMOS
amplifiers in the past are not a problem with this design.
Input V
OS
, drift, and broadband noise as well as voltage gain
(into 100 k and5k) are all equal to or better than widely
accepted bipolar equivalents, while the power supply
requirement is typically less than 0.5 mW.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational
amplifier and LPC661 for a single CMOS operational
amplifier with these same features.
Applications
n High-impedance buffer
n Precision current-to-voltage converter
n Long-term integrator
n High-impedance preamplifier
n Active filter
n Sample-and-Hold circuit
n Peak detector
Features
n Rail-to-rail output swing
n Micropower operation (
<
0.5 mW)
n Specified for 100 k and5kloads
n High voltage gain 120 dB
n Low input offset voltage 3 mV
n Low offset voltage drift 1.3 µV/˚C
n Ultra low input bias current 2 fA
n Input common-mode includes GND
n Operating range from +5V to +15V
n Low distortion 0.01% at 1 kHz
n Slew rate 0.11 V/µs
n Full military temperature range available
Application Circuit
Howland Current Pump
DS010548-23
August 2000
LPC662 Low Power CMOS Dual Operational Amplifier
© 2001 National Semiconductor Corporation DS010548 www.national.com