Datasheet

LME49720
www.ti.com SNAS393C –MARCH 2007–REVISED APRIL 2013
ABSOLUTE MAXIMUM RATINGS
(1)(2)(3)
Power Supply Voltage (V
S
= V
+
- V
-
) 36V
Storage Temperature −65°C to 150°C
Input Voltage (V-) - 0.7V to (V+) + 0.7V
Output Short Circuit
(4)
Continuous
Power Dissipation Internally Limited
ESD Susceptibility
(5)
2000V
ESD Susceptibility
(6)
Pins 1, 4, 7 and 8 200V
Pins 2, 3, 5 and 6 100V
Junction Temperature 150°C
Thermal Resistance θ
JA
(SOIC) 145°C/W
θ
JA
(PDIP) 102°C/W
θ
JA
(TO-99) 150°C/W
θ
JC
(TO-99) 35°C/W
Temperature Range T
MIN
≤ T
A
≤ T
MAX
–40°C ≤ T
A
≤ 85°C
Supply Voltage Range ±2.5V ≤ V
S
≤ ± 17V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For enusred
specifications and test conditions, see Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(4) Amplifier output connected to GND, any number of amplifiers within a package.
(5) Human body model, 100pF discharged through a 1.5kΩ resistor.
(6) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω).
ELECTRICAL CHARACTERISTICS FOR THE LME49720
(1)(2)
The following specifications apply for V
S
= ±15V, R
L
= 2kΩ, f
IN
= 1kHz, and T
A
= 25°C, unless otherwise specified.
LME49720
Units
Symbol Parameter Conditions
(Limits)
Typical
(3)
Limit
(4)
A
V
= 1, V
OUT
= 3V
rms
THD+N Total Harmonic Distortion + Noise R
L
= 2kΩ 0.00003 % (max)
R
L
= 600Ω 0.00003 0.00009
A
V
= 1, V
OUT
= 3V
RMS
IMD Intermodulation Distortion 0.00005 %
Two-tone, 60Hz & 7kHz 4:1
GBWP Gain Bandwidth Product 55 45 MHz (min)
SR Slew Rate ±20 ±15 V/μs (min)
V
OUT
= 1V
P-P
, –3dB
FPBW Full Power Bandwidth referenced to output magnitude 10 MHz
at f = 1kHz
A
V
= –1, 10V step, C
L
= 100pF
t
s
Settling time 1.2 μs
0.1% error range
Equivalent Input Noise Voltage f
BW
= 20Hz to 20kHz 0.34 0.65 μV
RMS
(max)
e
n
f = 1kHz 2.7 4.7 nV/√Hz
Equivalent Input Noise Density
f = 10Hz 6.4 (max)
f = 1kHz 1.6
i
n
Current Noise Density pA/√Hz
f = 10Hz 3.1
V
OS
Offset Voltage ±0.1 ±0.7 mV (max)
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For enusred
specifications and test conditions, see Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) Typical specifications are specified at +25ºC and represent the most likely parametric norm.
(4) Tested limits are ensured to AOQL (Average Outgoing Quality Level).
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