Datasheet

ADS1601
SBAS322D DECEMBER 2004REVISED OCTOBER 2011
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
For the most current package and ordering information, see the Package Option Addendum at the end of this
document, or visit the device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
ADS1601 UNIT
AVDD to AGND 0.3 to +6 V
DVDD to DGND 0.3 to +3.6 V
IOVDD to DGND 0.3 to +6 V
AGND to DGND 0.3 to +0.3 V
Input current 100, momentary mA
Input current 10, continuous mA
Analog I/O to AGND 0.3 to AVDD + 0.3 V
Digital I/O to DGND 0.3 to IOVDD + 0.3 V
Maximum junction temperature +150 °C
Operating temperature range 40 to +105 °C
Storage temperature range 60 to +150 °C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
2 Copyright © 20042011, Texas Instruments Incorporated