Datasheet

Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
MAX17085B
_______________________________________________________________________________________ 9
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, no load on LDO5, LDO3, OUT5, OUT3, and REF, V
CC
= 5V, ON3 = ON5 = V
CC
, V
DCIN
= V
LXC
= V
CSSP
= V
CSSN
= 19V, V
BSTC
- V
LXC
= 5V, V
BATT
= V
CSIP
= V
CSIN
= 12.6V, V
VCTL
= V
ISET
= 1.8V, CELLS = open, T
A
= -40°C to +85°C, unless
otherwise noted.) (Note 4)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
DH3 On-Time t
ON3
V
IN
= 12V,
V
OUT3
= 3.3V
(Note 3)
R
TON
= 549kI
(300kHz - 10%)
866 1171
ns
R
TON
= 202kI
(800kHz - 10%)
325 439
Minimum Off-Time t
OFF(MIN)
(Note 3) 330 ns
Extended On-Time Blanking Duty cycle > 50%; not for production test 360 ns
Ultrasonic Operating Frequency f
SW(USONIC)
SKIP = GND 13 kHz
MAIN SMPS FAULT DETECTION
OUT_ Overvoltage Trip Threshold
(PGOOD Pulled Low Above this
Level)
With respect to error comparator threshold 12 20 %
OUT_ Undervoltage Protection
Trip Threshold
With respect to error comparator threshold 63 77 %
PGOOD Lower Trip Threshold
With respect to error comparator threshold,
falling edge, hysteresis = 15mV
-350 -150 mV
PGOOD Output Low Voltage
PGOOD low impedance, ON5 = ON3 =
GND, I
SINK
= 4mA
0.4 V
Fault Reset Timer Not for production test 7 ms
MAIN SMPS CURRENT LIMIT
ILIM_ Adjustment Range 0.2 2.1 V
Valley Current-Limit Threshold
(Adjustable)
V
LIM
_
(VAL)
V
AGND
- V
LX
_
V
ILIM
_ = 0.5V 40 60
mV V
ILIM
_ = 1.00V 85 115
V
ILIM
_ = 2.10V 174 246
MAIN SMPS INPUTS AND OUTPUTS
SKIP Threshold Voltage V
SKIP
High = SKIP 2.3 V
CC
V
Mid = PWM 1.5 1.9
Low = ultrasonic 0 0.8
SKIP Leakage Current V
SKIP
= 0 or 5V, T
A
= +25°C -2 +2
FA
ON_ Input Logic Levels
High (SMPS on) 2.4
V
Low (SMPS off) 0.8
SMPS GATE DRIVERS
DH3, DH5 Gate Driver On-
Resistance
R
DH3
,
R
DH5
BST3 - LX3 and BST5 - LX5 forced to 5V;
high state
3.8
I
BST3 - LX3 and BST5 - LX5 forced to 5V;
low state
3.8
DL3, DL5 Gate-Driver On-
Resistance
R
DL3
, R
DL5
DL3, DL5; high state 3.5
I
DL3, DL5; low state 1.5
DHC Gate-Driver On-Resistance R
DHC
High state, I
DHC
= 10mA 3
I
Low state, I
DHC
= -10mA 2.1