Infineon IGBT module 34 mm 1.2 kV

Voltage control. Simple parallel wiring. Overload safe (no ''second breakdown''). Avalanche-proof. An advantageous combination of MOSFET and bipolar transistors. Switching speed, control function and robustness are the same as for the Power MOSFET. The turn-on resistance is nevertheless slightly lower and could be compared to that of a bipolar darlington transistor. IGBTs have no inverse diodes.