Datasheet

ManualsBrandsVishay ManualsDiscrete SemiconductorsEF Series MOSFET Single N-Channel 600V TO-220

SiHA22N60EF

www.vishay.com

Vishay Siliconix

S19-0120-Rev. A, 04-Feb-2019

Document Number: 92250

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

EF Series Power MOSFET With Fast Body Diode

FEATURES

• Low figure-of-merit (FOM) R

x Q

• Low input capacitance (C

iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q

)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V

= 140 V, starting T

= 25 °C, L = 28.2 mH, R

= 25 , I

= 3.2 A

c. 1.6 mm from case

d. I

 I

, di/dt = 400 A/μs, starting T

= 25 °C

e. Limited by maximum junction temperature

PRODUCT SUMMARY

(V) at T

max. 650

DS(on)

typ. () at 25 °C V

= 10 V 0.158

max. (nC) 96

(nC) 9

(nC) 21

Configuration Single

N-Channel MOSFET

Thin-Lead TO-220 FULLPAK

ORDERING INFORMATION

Package Thin-Lead TO-220 FULLPAK

Lead (Pb)-free and halogen-free SiHA22N60EF-GE3

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

600

Gate-source voltage V

± 30

Continuous drain current (T

= 150 °C)

at 10 V

= 25 °C

= 100 °C 12

Pulsed drain current

Linear derating factor 0.26 W/°C

Single pulse avalanche energy

144 mJ

Maximum power dissipation P

33 W

Operating junction and storage temperature range T

, T

stg

-55 to +150 °C

Drain-source voltage slope T

= 125 °C

dv/dt

V/ns

Reverse diode dv/dt

Soldering recommendations (peak temperature)

For 10 s 260 °C

Mounting torque, M3 screw 0.6 Nm

Summary of content (7 pages)

PAGE 1
SiHA22N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES D Thin-Lead TO-220 FULLPAK • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) G • Avalanche energy rated (UIS) GD • Material categorization: for definitions of compliance please see www.vishay.
PAGE 2
SiHA22N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 65 Maximum junction-to-case (drain) RthJC - 3.8 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.
PAGE 3
SiHA22N60EF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 1000 7V 20 100 6V 10 5V 2.5 1.5 5 10 15 0.5 10 0 -60 -40 -20 0 20 20 40 60 80 100 120 140 160 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs.
PAGE 4
SiHA22N60EF www.vishay.com Vishay Siliconix Axis Title Axis Title 20 9 1000 6 100 3 2nd line ID - Drain Current (A) VDS = 480 V VDS = 300 V VDS = 120 V 10 0 0 15 30 45 10000 15 1000 1st line 2nd line 10000 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 12 10 100 5 10 0 60 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TC - Case Temperature (°C) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs.
PAGE 5
SiHA22N60EF www.vishay.com Vishay Siliconix Axis Title 1 10000 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.1 0.05 0.02 100 Single pulse 10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Time (s) Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case RD VDS VDS tp VGS D.U.T. VDD Rg + - VDD VDS 10 V Pulse width ≤ 1 μs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig.
PAGE 6
SiHA22N60EF www.vishay.com Vishay Siliconix Peak Diode Recovery dv/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 Rg • • • • 1 Driver gate drive Period P.W. + V - DD dv/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test D= P.W. Period V GS = 10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 D.U.T.
PAGE 7
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