Datasheet

7. Performance specification :
Dielectric No evidence of flashover 4.7 Clamped in the trough of a 90͠ metallic v-block
withstanding mechanical damage, arcing or and shall be tested at ac potential respectively specified
voltage insulation break down in the type for 60-70 seconds
4.8 Natural resistance change per temp.
degree centigrade.
R2-R1
Temperature 1~10 ± 200PPM/͠
x 10
6
(PPM/͠)
Coefficient 11~10M ± 100PPM/͠ R1(t2-t1)
R1: Resistance value at room temperature (T1)
R2: Resistance value at room temp. plus 100 ͠(T2)
Test pattern: room temp. (T1), room temp. +100͠(T2)
Resistance change rate is 4.13 Permanent resistance change after the
Short time
± 5% (2.0% + 0.1Ө) Max.
application of a potential of 2.5 times RCWV
overload
± 1% (1.0% + 0.1Ө) Max.
for 5 seconds
High Power Thick Film Chip Resistors
Characteristics Limits
Test Methods
( JIS C 5201-1 )
Distributed by Conrad Electronic SE • Klaus-Conrad-Str. 1 • D-92240 Hirschau
Datasheet
V1_0717_01_en
6