Datasheet

UCC27323
GND
1
2
3
4
INB
INA
7
6
5
8
OUTA
VDD
OUTB
1
μ
F
CER
100
μ
F
AL EL
D
SCHOTTKY
VDD
C2
1
μ
F
V
SNS
R
SNS
0.1
Ω
C3
100
μ
F
10
Ω
ENBA ENBB
4.5 V
Signal
Generator
250 ns
UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
SLUS492H –JUNE 2001–REVISED MAY 2013 www.ti.com
Figure 3.
Note that the current sink capability is slightly stronger than the current source capability at lower VDD. This
stronger capability is due to the differences in the structure of the bipolar-MOSFET power output section, where
the current source is a P-channel MOSFET and the current sink has an N-channel MOSFET.
In a large majority of applications it is advantageous that the turn-off capability of a driver is stronger than the
turn-on capability. This helps to ensure that the MOSFET is held OFF during common power supply transients
which may turn the device back ON.
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