Datasheet

TPS736xx
SBVS038T –SEPTEMBER 2003–REVISED AUGUST 2010 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
(1)
PRODUCT V
OUT
(2)
TPS736xx yy yz XX is nominal output voltage (for example, 25 = 2.5V, 01 = Adjustable
(3)
).
YYY is package designator.
Z is package quantity.
(1) For the most current specification and package information, refer to the Package Option Addendum located at the end of this datasheet
or see the TI website at www.ti.com.
(2) Most output voltages of 1.25V and 1.3V to 5.0V in 100mV increments are available on a quick-turn basis using innovative factory
EEPROM programming. Minimum order quantities apply; contact factory for details and availability.
(3) For fixed 1.20V operation, tie FB to OUT.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1)
PARAMETER TPS736xx UNIT
V
IN
range –0.3 to 6.0 V
V
EN
range –0.3 to 6.0 V
V
OUT
range –0.3 to 5.5 V
V
NR
, V
FB
range –0.3 to 6.0 V
Peak output current Internally limited
Output short-circuit duration Indefinite
Continuous total power dissipation See Thermal Information Table
Junction temperature range, T
J
–55 to +150 °C
Storage temperature range –65 to +150 °C
ESD rating, HBM 2 kV
ESD rating, CDM 500 V
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under the Electrical Characteristics
is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
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