Datasheet

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DEVICE INFORMATION
FB2 REF GND DRV
C1− C1+
1
2
3
4
5
6
18
17
16
15
14
13
7 8
9
10
11
12
19
20212223
24
Exposed
Thermal Die*
COMP
ENR
EN
FB1
FB4
BASE
VIN SW SW
PGND PGND
SUP
C2−/MODE
C2+
OUT3
FB3
VCOMIN
VCOM
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
FB1
FB4
BASE
VIN
SW
SW
PGND
PGND
SUP
VCOM
VCOMIN
FB3
EN
ENR
COMP
FB2
REF
GND
DRV
C1−
C1+
C2−/MODE
C2+
OUT3
Thermal PAD*
PWP PACKAGE
TOP VIEW
RGE PACKAGE
TOP VIEW
TPS65100 , TPS65101
TPS65105
SLVS496C – SEPTEMBER 2003 – REVISED APRIL 2006
ELECTRICAL CHARACTERISTICS (continued)
V
in
= 3.3 V, EN = VIN, V
O
1 = 10 V, T
A
= -40 °C to 85 °C, typical values are at T
A
= 25 ° C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
I
- V
O
4 - V
BE
≥ 0.5 V
(1)
13.5 19
I
BASE
Maximum base drive current mA
V
I
- V
O
4 - V
BE
≥ 0.75 V
(1)
20 27
Line regulation 4.75 V ≤ V
I
≤ 5.5 V, I
load
= 500 mA 0.186 %/V
Load regulation 1 mA ≤ I
O
≤ 500 mA, V
I
= 5 V 0.064 %/A
Start up current V
O
4 ≤ 0.8 V 11 20 25 mA
VCOM BUFFER
V
cm
Common mode input range 2.25 (V
O
1)-2 V
V
os
Input offset voltage I
O
= 0 mA -25 +25 mV
I
O
= ± 25 mA -30 37
I
O
= ± 50 mA -45 55
DC Load regulation mV
I
O
= ± 100 mA -72 85
I
O
= ± 150 mA -97 110
I
B
VCOMIN Input bias current -300 -30 300 nA
V
O
1 = 15 V 1.2 A
I
peak
Peak output current V
O
1 = 10 V 0.65 A
V
O
1 = 5 V 0.15 A
FAULT PROTECTION THRESHOLDS
-8.75%
V
(th, Vo1)
V
O
1 Rising -12 -6 V
V
O
1
Shutdown threshold
V
(th, Vo2)
V
O
2 Rising -13 -9% V
O
2 -5 V
V
(th, Vo3)
V
O
3 Rising -11 -8% V
O
3 -5 V
(1) With V
I
= supply voltage of the TPS6510x, V
O
4 = output voltage of the regulator, V
BE
= basis emitter voltage of external transistor
5
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