Datasheet
TPS62110, TPS62111
TPS62112, TPS62113
www.ti.com
SLVS585C –JULY 2005–REVISED OCTOBER 2012
ELECTRICAL CHARACTERISTICS
V
I
= 12 V, V
O
= 3.3 V, I
O
= 600 mA, EN = V
I
, T
A
= –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
V
I
Input voltage range 3.1 17 V
I
O
= 0 mA, SYNC = GND, V
I
= 7.2 V, 20
T
A
= 25°C
(1)
I
(Q)
Operating quiescent current µA
I
O
= 0 mA, SYNC = GND, V
I
= 17 V
(1)
23 26
Quiescent current with enhanced LBI
I
Q(LBI)
EN = V
I
, LBI = GND 10 µA
comparator version (TPS62113 only).
EN = GND 1.5 5
I
(SD)
Shutdown current µA
EN = GND, T
A
= 25°C, V
I
= 7.2 V 1.5 3
ENABLE
V
IH
EN high-level input voltage 1.3 V
V
IL
EN low-level input voltage 0.3 V
EN trip-point hysteresis 170 mV
I
lkg
EN input leakage current EN = GND or V
I
, V
I
= 12 V 0.01 0.2 µA
I
(EN)
EN input current 0.6 V ≤ V
(EN)
≤ 4 V 10 20 µA
V
(UVLO)
Undervoltage lockout threshold Input voltage falling 2.8 3 3.1 V
Undervoltage lockout hysteresis 250 300 mV
POWER SWITCH
V
I
≥ 5.4 V; I
O
= 350 mA 165 250
r
DS(ON)
P-channel MOSFET on-resistance V
I
= 3.5 V; I
O
= 200 mA 340 mΩ
V
I
= 3 V; I
O
= 100 mA 490
P-channel MOSFET leakage
I
lkg
V
DS
= 17 V 0.1 1 µA
current
I
LIMF
P-channel MOSFET current limit V
I
= 7.2 V, V
O
= 3.3 V 2100 2400 2600 mA
V
I
≥ 5.4 V; I
O
= 350 mA 145 200
r
DS(ON)
N-channel MOSFET on-resistance V
I
= 3.5 V; I
O
= 200 mA 170 mΩ
V
I
= 3 V; I
O
= 100 mA 200
N-channel MOSFET leakage
I
lkg
V
DS
= 17 V 0.1 2 µA
current
PG OUTPUT, LBI, LBO
V
(PG)
Power-good trip voltage V
O
– 1.6% V
V
O
ramping positive 50
Power-good delay time µs
V
O
ramping negative 200
V
OL
PG, LBO output-low voltage V
(FB)
= 0.8 × V
O
nominal, I
OL
= 1 mA 0.3 V
I
OL
PG, LBO sink current 1 mA
I
lkg
PG, LBO output leakage current V
(FB)
= V
O
nominal, V
(LBI)
= V
I
0.01 0.25 µA
Minimum supply voltage for valid power
3 V
good, LBI, LBO signal
V
LBI
LBI input trip voltage Input voltage falling 1.256 V
I
lkg
LBI input leakage current 10 100 nA
LBI input trip-point
1.5%
accuracy
V
LBI,HYS
Low-battery input hysteresis 25 mV
(1) Device is not switching.
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