Datasheet

TPS40210-Q1, TPS40211-Q1
www.ti.com SLVS861D –AUGUST 2008–REVISED APRIL 2010
List of Materials
Table 3. List of Materials, Design Example 2
REFERENCE
TYPE DESCRIPTION SIZE
DESIGNATOR
C1, C2 10 mF, 25 V 1206
C3, C4 2.2 mF, 100 V 1210
C5 1 nF, NPO 0603
C6 100 pF, NPO 0603
C8 100 pF 0603
C9 Capacitor 0.1 mF 0603
C10 0.1 mF, 25 V 0805
C11 1 mF, 25 V 1206
C13 220 pF 0603
C14 10 nF, X7R 0603
C21 330 mF, 25 V electrolytic
D1 B2100, Schottky, 100 V, 2 A SMB
D2 Diode BZT52C43 SOD-123
D3 MMBD7000 SOT-23
L1 Inductor Wurth 7447709100, 10 mH, 6 A 12 × 12 × 10 mm
Q1 Si7850DP, 60 V, 31 mΩ SO-8
MOSFET
Q3 2N7002, 60 V, 0.1 A SOT-23
R1 15 mΩ 2512
R2 3.01 Ω 0805
R3 402 kΩ 0603
R4 14.3 kΩ 0603
R6 0.36 Ω 2512
Resistor
R11 1 kΩ 0603
R13 30.1 kΩ 0603
R15 49.9 kΩ 0603
R24 10 kΩ 0603
R23 10 Ω 0603
U1 Integrated circuit TPS40211 DGQ-10
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