Datasheet

TPS2419
SLVS998B –FEBRUARY 2010–REVISED SEPTEMBER 2011 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PRODUCT INFORMATION
(1)
MOSFET GATE
DEVICE TEMPERATURE PACKAGE
(1)
MARKING
CONTROL
PW (TSSOP-8) 2419
TPS2419 –40°C to 85°C ON/OFF
D (SO-8) 2419D
(1) For package and ordering information, see the Package Option Addendum at the end of this
document, or see the TI Web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
over recommended operating junction temperature range, voltages are referenced to GND (unless otherwise noted)
VALUE UNIT
A, C voltage –0.3 to 18 V
A above C voltage 7.5 V
C above A voltage 18 V
GATE, BYP voltage
(2)
–0.3 to 30 V
BYP to A voltage –0.3 to 13 V
GATE above BYP voltage 0.3 V
RSET
(2)
voltage –0.3 to 7 V
EN –0.3 to 5.5 V
GATE short to A or C or GND Indefinite
Human body model 2 kV
ESD
Charged device model 500 V
T
J
Maximum junction temperature Internally limited °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltage should not be applied to these pins.
DISSIPATION RATINGS
POWER RATING
PACKAGE θ
JA
– Low k °C/W θ
JA
– High k °C/W High k
T
A
= 85°C (mW)
PW (TSSOP) 258 159 250
D (SO) 176 97.5 410
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Product Folder Link(s): TPS2419