Datasheet

(b) Diode-ConnectedTransistor
(a) GNDCollector-ConnectedTransistor
DXP
DXN
C
DIFF
(1)
DXP
DXN
C
DIFF
(1)
(a) GNDCollector-ConnectedTransistor
DXP
DXN
R
S
(1)
R
S
(1)
(b) Diode-ConnectedTransistor
DXP
DXN
R
S
(1)
R
S
(1)
TMP431
TMP432
SBOS441F –SEPTEMBER 2009–REVISED AUGUST 2013 www.ti.com
PARAMETRIC MEASUREMENT INFORMATION
TYPICAL CONNECTIONS
Figure 11. SERIES RESISTANCE CONFIGURATION
(1) R
S
should be less than 1kΩ; see Filtering section.
Figure 12.
Figure 13. DIFFERENTIAL CAPACITANCE CONFIGURATION
(1) C
DIFF
should be less than 2200pF; see Filtering section.
Figure 14.
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