Datasheet
SLOS157B − JUNE1996 − REVISED APRIL 2005
3−2
WWW.TI.COM
AVAILABLE OPTIONS
T
A
V
IO
max AT 25°C
PACKAGED DEVICES
SYMBOL
CHIP
FORM
‡
T
A
V
IO
max AT 25
°
C
SOT-23 (DBV)
†
SYMBOL
FORM
‡
(Y)
0°C to 70°C 3 mV TLV2221CDBV VADC
TLV2221Y
−40°C to 85°C 3 mV TLV2221IDBV VADI
TLV2221Y
†
The DBV package available in tape and reel only.
‡
Chip forms are tested at T
A
= 25°C only.
TLV2221Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2221C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 10 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
T
J
max = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (2) IS INTERNALLY CONNECTED
TO
BACKSIDE
OF
CHIP.
+
−
OUT
IN+
IN−
V
DD+
(5)
(1)
(3)
(4)
(2)
V
DD−
/GND
40
(3)
(2)
(1)
(5)
(4)
32