Datasheet


SLAS105D − JANUARY 1995 − REVISED APRIL 2004
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5
electrical characteristics at V
DD
= 5 V, V
I(REFT)
= 2.6 V, V
I(REFB)
= 0.6 V, f
s
= 40 MSPS, T
A
= 25°C
(unless otherwise noted)
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
E
L
Linearity error, integral
T
A
= 25°C ±0.6 ±1
E
L
Linearity error, integral
f
s
= 40 MSPS,
T
A
= MIN to MAX ±1
LSB
E
D
Linearity error, differential
f
s
= 40 MSPS,
V
I
= 0.6 V to 2.6 V
T
A
= 25°C ±0.3 ±0.75
LSB
E
D
Linearity error, differential
V
I
= 0.6 V to 2.6 V
T
A
= MIN to MAX ±1
Self bias (1), V
RB
Short REFB to REFBS
See Figure 13
0.57 0.61 0.65
Self bias (1), V
RT
Short REFT to REFTS
See Figure 13
2.47 2.63 2.80
V
Self bias (2), V
RB
Short REFB to AGND
See Figure 14
AGND
V
Self bias (2), V
RT
Short REFT to REFTS
See Figure 14
2.18 2.29 2.4
I
ref
Reference-voltage current V
I(REFT)
− V
I(REFB)
= 2 V 5.2 7.5 12 mA
R
ref
Reference-voltage resistor Between REFT and REFB terminals 165 270 350 Ω
C
i
Analog input capacitance V
I(ANLG)
= 1.5 V + 0.07 V
rms
4 pF
E
ZS
Zero-scale error
V
I(REFT)
− V
I(REFB)
= 2 V
−18 −43 −68
mV
E
FS
Full-scale error
V
I(REFT)
− V
I(REFB)
= 2 V
−25 0 25
mV
I
IH
High-level input current V
DD
= 5.25 V, V
IH
= V
DD
5
A
I
IL
Low-level input current V
DD
= 5.25 V, V
IL
= 0 5
µ
A
I
OH
High-level output current OE = GND, V
DD
= 4.75 V, V
OH
= V
DD
−0.5 V −1.5
mA
I
OL
Low-level output current OE = GND, V
DD
= 4.75 V, V
OL
= 0.4 V 2.5
mA
I
OZH(lkg)
High-level
high-impedance-state
output leakage current
OE = V
DD
, V
DD
= 5.25, V
OH
= V
DD
16
A
I
OZL(lkg)
Low-level
high-impedance-state
output leakage current
OE = V
DD
, V
DD
= 4.75, V
OL
= 0 16
µ
A
I
DD
Supply current
f
s
= 40 MSPS, C
L
≤ 25 pF,
NTSC
‡
ramp wave input, See Note 1
17 27 mA
†
Conditions marked MIN or MAX are as stated in recommended
operating conditions.
‡
National Television System Committee
(1)
Supply current specification does not include I
ref
.