Datasheet

TL081, TL081A, TL081B, TL082, TL082A, TL082B
TL082Y, TL084, TL084A, TL084B, TL084Y
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081D – FEBRUARY 1977 – REVISED FEBRUARY 1997
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics, V
CC ±
= ±15 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
†
T
TL081M, TL082M TL084M
UNIT
PARAMETER
TEST
CONDITIONS
†
T
A
MIN TYP MAX MIN TYP MAX
UNIT
V
IO
In
p
ut offsetvoltage
V
O
=0
R
S
=50Ω
25°C 3 6 3 9
mV
V
IO
I
npu
t
o
ff
se
t
vo
lt
age
V
O
=
0
,
R
S
=
50
Ω
–55°C to 125°C 9 15
m
V
α
VIO
Temperature
coefficient of input
offset voltage
V
O
= 0 R
S
= 50 Ω –55°C to 125°C 18 18 µV/°C
I
IO
Input offset current
‡
V
O
=0
25°C 5 100 5 100 pA
I
IO
Input offset current
‡
V
O
=
0
125°C 20 20 nA
I
IB
Input bias current
‡
V
O
=0
25°C 30 200 30 200 pA
I
IB
Input bias current
‡
V
O
=
0
125°C 50 50 nA
V
ICR
Common-mode input
voltage range
25°C ±11
±12
to
15
±11
± 12
to
15
V
Mi k
R
L
= 10 kΩ 25°C ±12 ±13.5 ±12 ±13.5
V
OM
Maximum peak
out
p
ut voltage swing
R
L
≥ 10 kΩ
55
°
Cto125
°
C
±12 ±12
V
out ut
voltage
swing
R
L
≥ 2 kΩ
–
55°C
t
o
125°C
±10 ±12 ±10 ±12
A
VD
Large-signal
differential voltage
V
O
= ±10 V, R
L
≥ 2 kΩ 25°C 25 200 25 200
V/mV
A
VD
diff
erent
i
a
l
vo
l
tage
amplification
V
O
= ±10 V,
R
L
≥ 2 kΩ –55°C to 125°C 15 15
V/
m
V
B
1
Unity-gain bandwidth 25°C 3 3 MHz
r
i
Input resistance 25°C 10
12
10
12
Ω
CMRR
Common-mode
rejection ratio
V
IC
= V
ICR
min,
V
O
= 0, R
S
= 50 Ω
25°C 80 86 80 86 dB
k
SVR
Supply voltage
rejection ratio
(∆V
CC±
/∆V
IO
)
V
CC
= ±15 V to ±9 V,
V
O
= 0, R
S
= 50 Ω
25°C 80 86 80 86 dB
I
CC
Supply current
(per amplifier)
V
O
= 0, No load 25°C 1.4 2.8 1.4 2.8 mA
V
O1
/V
O2
Crosstalk attenuation A
VD
= 100 25°C 120 120 dB
†
All characteristics are measured under open-loop conditions with zero common-mode input voltage unless otherwise specified.
‡
Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive as shown in
Figure 17. Pulse techniques must be used that maintain the junction temperatures as close to the ambient temperature as is possible.
operating characteristics, V
CC±
= ±15 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX
UNIT
V
I
= 10 V, R
L
= 2 kΩ, C
L
= 100 pF, See Figure 1 8
∗
13
SR Slew rate at unity gain
V
I
= 10 V,
R
L
= 2 kΩ, C
L
= 100 pF,
5
∗
V/µs
T
A
= – 55°C to 125°C,
See Figure 1
5
∗
t
r
Rise time
V
I
=20mV
R
L
=2kΩ
C
L
= 100
p
F
See Figure 1
0.05 µs
Overshoot factor
V
I
=
20
m
V
,
R
L
=
2
kΩ
,
C
L
=
100
p
F
,
S
ee
Fi
gure
1
20%
V
Equivalent input noise
R
S
=20Ω
f = 1 kHz 18 nV/√Hz
V
n
Equivalent
in ut
noise
voltage
R
S
=
20
Ω
f = 10 Hz to 10 kHz 4 µV
I
n
Equivalent input noise
current
R
S
= 20 Ω, f = 1 kHz 0.01 pA/√Hz
THD Total harmonic distortion
V
I
rms = 6 V,
f = 1 kHz
A
VD
= 1, R
S
≤ 1 kΩ, R
L
≥ 2 kΩ,
0.003%
∗On products compliant to MIL-PRF-38535, this parameter is not production tested.