Datasheet

−40
−50
−60
−70
−80
−90
100k 1M 10M
f − Frequency − Hz
−100
Distortion − dB
−110
2ndHarmonic
V
CC
= ±15V
R
L
=150 Ω
G=2
3rdHarmonic
DISTORTION
vs
FREQUENCY
THS4011
THS4012
SLOS216E –JUNE 1999–REVISED APRIL 2010 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
PACKAGED DEVICES
(1)
PACKAGED DEVICES
NUMBER OF MSOP EVALUATION
T
A
PLASTIC SMALL PLASTIC MSOP
(2)
CERAMIC DIP CHIP CARRIER
CHANNELS SYMBOL MODULE
OUTLINE
(2)
(D) (DGN) (JG) (FK)
1 THS4011CD THS4011CDGN TIACI — — THS4011EVM
0°C to
70°C
2 THS4012CD THS4012CDGN
(3)
TIABY — — THS4012EVM
1 THS4011ID THS4011DGN TIACJ — — —
–40°C to
85°C
2 THS4012ID THS4012IDGN
(3)
TIABZ — — —
–55°C to
1 — — — THS4011MJG THS4011MFK —
125°C
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2) The D and DGN packages are available taped and reeled. Add an R suffix to the device type (i.e., THS4011CDGNR).
(3) This device is in the Product Preview stage of development. Please contact your local TI sales office for availability.
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Product Folder Link(s): THS4011 THS4012