Datasheet

DESCRIPTION (CONTINUED)
FUNCTION TABLES
SN65LVDM179 , SN65LVDM180
SN65LVDM050 , SN65LVDM051
SLLS324J – DECEMBER 1998 – REVISED JULY 2009 .................................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
The transmission media may be printed-circuit board traces, backplanes, or cables. The ultimate rate and
distance of data transfer is dependent upon the attenuation characteristics of the media, the noise coupling to the
environment, and other application-specific characteristics.
The SN65LVDM179, SN65LVDM180, SN65LVDM050, and SN65LVDM051 are characterized for operation from
– 40 ° C to 85 ° C.
Table 1. Maximum Recommended Operating Speeds
Part Number All Buffers Active Rx Buffer Only Tx Buffer Only
SN65LVDM179 150 Mbps 150 Mbps 500 Mbps
SN65LVDM180 150 Mbps 150 Mbps 500 Mbps
SN65LVDM050 100 Mbps 100 Mbps 400 Mbps
SN65LVDM051 100 Mbps 100 Mbps 400 Mbps
AVAILABLE OPTIONS
PACKAGE
T
A
SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
(D) (DGK) (PW)
SN65LVDM050D — SN65LVDM050PW
SN65LVDM051D — SN65LVDM051PW
– 40 ° C to 85 ° C
SN65LVDM179D SN65LVDM179DGK —
SN65LVDM180D — SN65LVDM180PW
SN65LVDM179 RECEIVER
INPUTS OUTPUT
(1)
V
ID
= V
A
– V
B
R
V
ID
≥ 50 mV H
50 MV < V
ID
< 50 mV ?
V
ID
≤ – 50 mV L
Open H
(1) H = high level, L = low level, ? = indeterminate
SN65LVDM179 DRIVER
INPUT
(1)
OUTPUTS
(1)
D Y Z
L L H
H H L
Open L H
(1) H = high level, L = low level
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Product Folder Link(s): SN65LVDM179 SN65LVDM180 SN65LVDM050 SN65LVDM051