Datasheet

ReceiverOnly
DriverandReceiver
NoLoad,
V =5V,
T =25 C
50%SquareWaveInput
CC
A
o
100
SignalRate-kbps
1 10
0.1
I
CC
-SupplyCurrent-mA
1
10
-60
-40
-20
0
20
40
60
-8 -6 -4 -2 0 2 4 6 8 12
V
CC
=5V
V
CC
=0V
V
I
-BusInputVoltage-V
I
I
-InputBiasCurrent- Am
80
10
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
www.ti.com SLLS562G –AUGUST 2009–REVISED MAY 2009
PACKAGE THERMAL INFORMATION
PARAMETER TEST CONDITIONS PACKAGE MIN TYP MAX UNIT
MOSP (DGK) 266
Low-k board, no air flow SOIC (D) 210 °C/W
PDIP (P) 155
Junction-to-ambient
θ
JA
thermal resistance
MOSP (DGK) 180
High-k board, no air flow SOIC (D) 130 °C/W
PDIP (P) 70
MOSP (DGK) 110
Junction-to-board
θ
JB
Low-k board, no air flow SOIC (D) 55 °C/W
thermal resistance
PDIP (P) 40
MOSP (DGK) 66
Junction-to-case
θ
JC
SOIC (D) 80 °C/W
thermal resistance
PDIP (P) 80
Input to D is a 50% duty ALL HVD3082E 203
cycle square wave at max
ALL HVD3085E 205
Average power
P
(AVG)
rec'd signal rate mW
dissipation
R
L
= 54 Ω V
CC
= 5.5 V, T
J
=
ALL HVD3088E 276
130°C
Thermal shut-down
T
SD
ALL 165 °C
junction temperature
TYPICAL CHARACTERISTICS
SN65HVD3082E
BUS INPUT CURRENT RMS SUPPLY CURRENT
vs vs
BUS INPUT VOLTAGE SIGNALING RATE
Figure 14. Figure 15.
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