Datasheet

TXD
1
2
3
4
8
7
6
5
GND
V
CC
RXD
S
CANH
CANL
AB
HVD253
TXD
1
2
3
4
8
7
6
5
GND
V
CC
RXD
S
CANH
CANL
V
REF
HVD252
SN65HVD252
SN65HVD253
SLLSE37 –JUNE 2010 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Table 1. DRIVER (SN65HVD252)
INPUTS OUTPUTS
BUS STATE
TXD S CAN_H CAN_L
L H L Dominant
L or OPEN
H or OPEN Z Z Recessive
X H Z Z Recessive
Table 2. RECEIVER (SN65HVD252)
INPUTS OUTPUT
BUS STATE V
ID
= V
CANH
– V
CANL
RXD
Dominant V
ID
≥ 0.9 V L
? 0.5 V < V
ID
< 0.9 V ?
Recessive V
ID
< 0.5 V H
OPEN V
ID
≈ 0 V H
Table 3. DRIVER (SN65HVD253)
INPUTS OUTPUTS
BUS STATE
TXD AB S CAN_H CAN_L
X X H Z Z Recessive
L L or open H L Dominant
H or open X L or OPEN Z Z Recessive
X H Z Z Recessive
Table 4. RECEIVER (SN65HVD253)
INPUTS OUTPUT
AB BUS STATE V
ID
= V
CANH
– V
CANL
TXD RXD
Dominant V
ID
≥ 0.9 V L
? 0.5 V < V
ID
< 0.9 V ?
L or open X
Recessive V
ID
≤ 0.5 V H
Open V
ID
≈ 0 V H
Dominant V
ID
≥ 0.9 V X L
L L
H ? 0.5 V < V
ID
< 0.9 V
H ?
Recessive V
ID
≤ 0.5 V or open H H
X X X L L
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