Datasheet

MSP430G2x11
MSP430G2x01
www.ti.com SLAS695I –FEBRUARY 2010–REVISED FEBRUARY 2013
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS V
CC
MIN TYP MAX UNIT
V
CC(PGM/ERASE)
Program and erase supply voltage 2.2 3.6 V
f
FTG
Flash timing generator frequency 257 476 kHz
I
PGM
Supply current from V
CC
during program 2.2 V, 3.6 V 1 5 mA
I
ERASE
Supply current from V
CC
during erase 2.2 V, 3.6 V 1 7 mA
t
CPT
Cumulative program time
(1)
2.2 V, 3.6 V 10 ms
t
CMErase
Cumulative mass erase time 2.2 V, 3.6 V 20 ms
Program and erase endurance 10
4
10
5
cycles
t
Retention
Data retention duration T
J
= 25°C 100 years
t
Word
Word or byte program time
(2)
30 t
FTG
t
Block, 0
Block program time for first byte or word
(2)
25 t
FTG
Block program time for each additional
t
Block, 1-63
18 t
FTG
byte or word
(2)
t
Block, End
Block program end-sequence wait time
(2)
6 t
FTG
t
Mass Erase
Mass erase time
(2)
10593 t
FTG
t
Seg Erase
Segment erase time
(2)
4819 t
FTG
(1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word write, byte write, and block write modes.
(2) These values are hardwired into the flash controller's state machine (t
FTG
= 1/f
FTG
).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
V
(RAMh)
RAM retention supply voltage
(1)
CPU halted 1.6 V
(1) This parameter defines the minimum supply voltage V
CC
when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
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