Datasheet
LMZ31520
SLVSBM9B –OCTOBER 2013–REVISED DECEMBER 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
(1)
over operating temperature range (unless otherwise noted) VALUE UNIT
MIN MAX
VIN, PVIN –0.3 20 V
Input Voltage
INH, VADJ, PWRGD, PWRGD_PU, ILIM, FREQ_SEL, SS_SEL, V5V –0.3 7 V
PH –1 25 V
Output Voltage PH 10ns Transient –2 27
VOUT –0.3 6 V
V
DIFF
(GND to exposed thermal ±200 mV
pad)
Operating Junction Temperature –40 125
(2)
°C
Storage Temperature –55 150 °C
Mechanical Shock Mil-STD-883D, Method 2002.3, 1 msec, 1/2 sine, mounted 250 G
Mechanical Vibration Mil-STD-883D, Method 2007.2, 20-2000Hz 20
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) See the temperature derating curves in the Typical Characteristics section for thermal information.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT
PV
IN
Input Switching Voltage 3.0 14.5 V
V
IN
Input Bias Voltage 4.5 14.5 V
V
OUT
Output Voltage 0.6 3.6 V
f
SW
Switching Frequency 300 850 kHz
ORDERING INFORMATION
For the most current package and ordering information, see the Package Option Addendum at the end of this datasheet, or see
the TI website at www.ti.com.
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