Datasheet

LM7171
SNOS760B –MAY 1999–REVISED MARCH 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
ESD Tolerance
(2)
2.5 kV
Supply Voltage (V
+
–V
−
) 36V
Differential Input Voltage
(3)
±10V
Output Short Circuit to Ground
(4)
Continuous
Storage Temperature Range −65°C to +150°C
Maximum Junction Temperature
(5)
150°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not specified. For ensured specifications and the test
conditions, see the Electrical Characteristics.
(2) Human body model, 1.5 kΩ in series with 100 pF.
(3) Input differential voltage is applied at V
S
= ±15V.
(4) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
(5) The maximum power dissipation is a function of T
J(MAX)
, θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient
temperature is P
D
= (T
J(MAX)
–T
A
)/θ
JA
. All numbers apply for packages soldered directly into a PC board.
Operating Ratings
(1)
Supply Voltage 5.5V ≤ V
S
≤ 36V
Junction Temperature Range
LM7171AI, LM7171BI −40°C ≤ T
J
≤ +85°C
Thermal Resistance (θ
JA
)
8-Pin PDIP 108°C/W
8-Pin SOIC 172°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not specified. For ensured specifications and the test
conditions, see the Electrical Characteristics.
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