Datasheet
LM5119/LM5119Q
www.ti.com
SNVS676F –AUGUST 2010–REVISED FEBRUARY 2013
Electrical Characteristics (continued)
Limits in standard type are for T
J
= 25°C only; limits in boldface type apply over the junction temperature range of -40°C to
+125°C. Unless otherwise specified, the following conditions apply: VIN = 36V, VCC = 8V, VCCDIS = 0V, EN2 = 5V, R
T
=
25kΩ, no load on LO and HO. Electrical characteristics are per channel where applicable. See
(1)
,
(2)
, and
(3)
.
Symbol Parameter Conditions Min Typ Max Units
Oscillator
f
SW1
Frequency 1 R
T
= 25kΩ 180 200 220 kHz
f
SW2
Frequency 2 R
T
= 10kΩ 430 480 530 kHz
RT Output Voltage 1.25 V
RT Sync Positive Threshold 2.5 3.2 4 V
Sync Pulse Minimum Width 100 ns
Current Limit
V
CS(TH)
Cycle-by-cycle Sense Voltage RAMP = 0 106 120 134 mV
Threshold (CS - CSG)
CS Bias Current CS = 0V -70 -95 µA
Hiccup Mode Fault Timer 256 Cycles
RES
I
RES
RES current Source 9.7 µA
V
RES
RES threshold C
RES
Charging 1.20 1.25 1.30 V
Diode Emulation
V
IL
DEMB Input Low Threshold 2.0 1.65 V
V
IH
DEMB Input High Threshold 2.9 2.6 V
DEMB Input Pull-Down Resistance 50 kΩ
SW Zero Cross Threshold -5 mV
LO Gate Driver
V
OLL
LO Low-state Output Voltage I
LO
= 100mA 0.1 0.18 V
V
OHL
LO High-state Output Voltage I
LO
= -100mA, 0.17 0.26 V
V
OHL
= VCC - V
LO
LO Rise Time C-load = 1000pF 6 ns
LO Fall Time C-load = 1000pF 5 ns
I
OHL
Peak LO Source Current V
LO
= 0V 2.5 A
I
OLL
Peak LO Sink Current V
LO
= VCC 3.3 A
HO Gate Driver
V
OLH
HO Low-state Output Voltage I
HO
= 100mA 0.11 0.19 V
V
OHH
HO High-state Output Voltage I
HO
= -100mA, V
OHH
= V
HB
- V
HO
0.18 0.27 V
HO Rise Time C-load = 1000pF 6 ns
HO Fall Time C-load = 1000pF 5 ns
I
OHH
Peak HO Source Current V
HO
= 0V, SW = 0, HB = 8V 2.2 A
I
OLH
Peak HO Sink Current V
HO
= V
HB
= 8V 3.3 A
HB to SW Under-voltage 3 V
HB DC Bias Current HB - SW = 8V 70 100 µA
SWITCHING CHARACTERISTICS
LO Fall to HO Rise Delay No load 70 ns
HO Fall to LO Rise Delay No load 60 ns
THERMAL
T
SD
Thermal Shutdown Rising 165 °C
Thermal Shutdown Hysteresis 25 °C
θ
JA
Junction to Ambient 40 °C/W
θ
JC
Junction to Case 4 °C/W
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