Datasheet
NRND
LM5109
www.ti.com
SNVS369 –APRIL 2005
ABSOLUTE MAXIMUM RATINGS
(1)
If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/Distributors for
availability and specifications.
V
DD
to V
SS
-0.3V to 18V
HB to HS −0.3V to 18V
LI or HI to V
SS
−0.3V to V
DD
+0.3V
LO to V
SS
−0.3V to V
DD
+0.3V
HO to V
SS
V
HS
−0.3V to V
HB
+0.3V
HS to V
SS
(2)
−5V to 100V
HB to V
SS
118V
Junction Temperature -40°C to +150°C
Storage Temperature Range −55°C to +150°C
ESD Rating HBM
(3)
2 kV
(1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is specified. Operating Ratings do not imply specified performance limits. For specified performance limits
and associated test conditions, see the Electrical Characteristics tables.
(2) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than V
DD
- 15V. For example, if V
DD
= 10V, the negative transients at HS must not exceed -5V.
(3) The human body model is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin. Pin 6 , Pin 7 and Pin 8 are rated at
500V.
RECOMMENDED OPERATING CONDITIONS
V
DD
8V to 14V
HS
(1)
−1V to 100V
HB V
HS
+8V to V
HS
+14V
HS Slew Rate < 50 V/ns
Junction Temperature −40°C to +125°C
(1) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than V
DD
- 15V. For example, if V
DD
= 10V, the negative transients at HS must not exceed -5V.
ELECTRICAL CHARACTERISTICS
Specifications in standard typeface are for T
J
= +25°C, and those in boldface type apply over the full operating junction
temperature range. Unless otherwise specified, V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO.
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
Units
SUPPLY CURRENTS
I
DD
V
DD
Quiescent Current LI = HI = 0V 0.3 0.6 mA
I
DDO
V
DD
Operating Current f = 500 kHz 2.1 3.4 mA
I
HB
Total HB Quiescent Current LI = HI = 0V 0.06 0.2 mA
I
HBO
Total HB Operating Current f = 500 kHz 1.6 3.0 mA
I
HBS
HB to V
SS
Current, Quiescent V
HS
= V
HB
= 100V 0.1 10 µA
I
HBSO
HB to V
SS
Current, Operating f = 500 kHz 0.5 mA
INPUT PINS LI and HI
V
IL
Low Level Input Voltage Threshold 0.8 1.8 V
V
IH
High Level Input Voltage Threshold 1.8 2.2 V
R
I
Input Pulldown Resistance 100 180 500 kΩ
UNDER VOLTAGE PROTECTION
V
DDR
V
DD
Rising Threshold V
DDR
= V
DD
- V
SS
6.0 6.9 7.4 V
(1) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Texas Instrument’s Average Outgoing Quality Level
(AOQL).
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