Datasheet

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LM4990

www.ti.com

SNAS184E –DECEMBER 2002–REVISED MAY 2013

LM4990 2 Watt Audio Power Amplifier with Selectable

Shutdown Logic Level

Check for Samples: LM4990

FEATURES

DESCRIPTION

The LM4990 is an audio power amplifier primarily

• Available in Space-Saving Packages: WSON,

designed for demanding applications in mobile

Exposed-DAP MSOP-PowerPAD, VSSOP, and

phones and other portable communication device

DSBGA

applications. It is capable of delivering 1.25 watts of

• Ultra Low Current Shutdown Mode

continuous average power to an 8Ω BTL load and 2

watts of continuous average power (NGZ and DGQ

• Improved Click and Pop Circuitry Eliminates

only) to a 4Ω BTL load with less than 1% distortion

Noise During Turn-On and Turn-Off

(THD+N+N) from a 5V

power supply.

Transitions

• 2.2 - 5.5V Operation Boomer audio power amplifiers were designed

specifically to provide high quality output power with a

• No Output Coupling Capacitors, Snubber

minimal amount of external components. The

Networks or Bootstrap Capacitors Required

LM4990 does not require output coupling capacitors

• Unity-Gain Stable

or bootstrap capacitors, and therefore is ideally suited

for mobile phone and other low voltage applications

• External Gain Configuration Capability

where minimal power consumption is a primary

• User Selectable Shutdown High or Low Logic

requirement.

Level

The LM4990 features a low-power consumption

shutdown mode. To facilitate this, Shutdown may be

APPLICATIONS

enabled by either logic high or low depending on

• Mobile Phones

mode selection. Driving the shutdown mode pin either

• PDAs

high or low enables the shutdown pin to be driven in

a likewise manner to enable shutdown.

• Portable Electronic Devices

The LM4990 contains advanced pop & click circuitry

KEY SPECIFICATIONS

which eliminates noise which would otherwise occur

during turn-on and turn-off transitions.

• Improved PSRR at 217Hz & 1KHz: 62dB

The LM4990 is unity-gain stable and can be

• Power Output at 5.0V, 1% THD+N,

configured by external gain-setting resistors.

– 4Ω (NGZ and DGQ only): 2W (Typ)

• Power Output at 5.0V, 1% THD+N, 8Ω: 1.25W

(Typ)

• Power Output at 3.0V, 1% THD+N, 4Ω: 600mW

(Typ)

• Power Output at 3.0V, 1% THD+N, 8Ω: 425mW

(Typ)

• Shutdown Current: 0.1µA (Typ)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (28 pages)

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LM4990 www.ti.com LM4990 SNAS184E – DECEMBER 2002 – REVISED MAY 2013 2 Watt Audio Power Amplifier with Selectable Shutdown Logic Level Check for Samples: LM4990 FEATURES DESCRIPTION • The LM4990 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of delivering 1.
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LM4990 SNAS184E – DECEMBER 2002 – REVISED MAY 2013 www.ti.com Connection Diagram Figure 1. VSSOP Package – Top View See Package Number DGK Figure 2. WSON Package – Top View See Package Number NGZ0010B Figure 3. Exposed-DAP MSOP-PowerPAD Package – Top View See Package Number DGQ Figure 4. 9-Bump DSBGA (Top View) See Package Number YZR0009 Package Shutdown Mode Typical Power Output at 5V, 1% THD+N 2 NGZ DGQ DGK YZR Selectable Selectable Low Low 2W (RL = 4Ω) 2W (RL = 4Ω) 1.25W (RL = 8Ω) 1.
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LM4990 www.ti.com SNAS184E – DECEMBER 2002 – REVISED MAY 2013 Typical Application Note: DGK and YZR packaged devices are active low only; Shutdown Mode pin is internally tied to GND. Figure 5. Typical Audio Amplifier Application Circuit (NGZ and DGQ) Figure 6.
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LM4990 SNAS184E – DECEMBER 2002 – REVISED MAY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Supply Voltage (3) 6.0V −65°C to +150°C Storage Temperature −0.3V to VDD +0.
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LM4990 www.ti.com SNAS184E – DECEMBER 2002 – REVISED MAY 2013 Electrical Characteristics VDD = 5V (1) (2) The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA = 25°C. Symbol Parameter Conditions LM4990 Typical (3) Limit (4) (5) Units (Limits) VIN = 0V, Io = 0A, No Load 3 7 mA (max) VIN = 0V, Io = 0A, 8Ω Load 4 10 mA (max) VSD = VSD Mode (6) 0.1 2.0 µA (max) Shutdown Voltage Input High VSD MODE = VDD 1.
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LM4990 SNAS184E – DECEMBER 2002 – REVISED MAY 2013 www.ti.com Electrical Characteristics VDD = 3V (1) (2) The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA = 25°C. Symbol Parameter Conditions LM4990 Typical (3) Limit (4) (5) Units (Limits) VIN = 0V, Io = 0A, No Load 2 7 mA (max) VIN = 0V, Io = 0A, 8Ω Load 3 9 mA (max) VSD = VSD Mode (6) 0.1 2.0 µA (max) Shutdown Voltage Input High VSD MODE = VDD 1.
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LM4990 www.ti.com SNAS184E – DECEMBER 2002 – REVISED MAY 2013 Electrical Characteristics VDD = 2.6V (1) (2) The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA = 25°C. Symbol Parameter Conditions LM4990 Typical (3) Limit (4) (5) Units (Limits) VIN = 0V, Io = 0A, No Load 2.0 mA VIN = 0V, Io = 0A, 8Ω Load 3.0 mA Shutdown Current VSD = VSD Mode (6) 0.1 µA VSDIH Shutdown Voltage Input High VSD MODE = VDD 1.
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LM4990 SNAS184E – DECEMBER 2002 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics NGZ and DGQ Specific Characteristics THD+N+N vs Frequency VDD = 5V, RL = 4Ω, and PO = 1W THD+N+N vs Output Power VDD = 5V, RL = 4Ω, and f = 1 kHz 1 1 THD+N (%) 10 THD+N (%) 10 0.1 0.01 20 8 0.1 100 1k 10k 20k 0.01 10m 100m FREQUENCY (Hz) OUTPUT POWER (W) Figure 7. Figure 8.
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LM4990 www.ti.com SNAS184E – DECEMBER 2002 – REVISED MAY 2013 Typical Performance Characteristics THD+N+N vs Frequency VDD = 5V, RL = 8Ω, and PO = 500mW THD+N+N vs Frequency VDD = 3V, RL = 4Ω, and PO = 500mW 1 1 THD+N (%) 10 THD+N (%) 10 0.1 0.1 0.01 20 100 1k 0.01 20 10k 20k 100 1k 10k 20k FREQUENCY (Hz) FREQUENCY (Hz) Figure 9. Figure 10. THD+N+N vs Frequency VDD = 3V, RL = 8Ω, and PO = 250mW THD+N+N vs Frequency VDD = 2.
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LM4990 SNAS184E – DECEMBER 2002 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics (continued) THD+N+N vs Output Power VDD = 3V, RL = 4Ω, and f = 1kHz THD+N+N vs Output Power VDD = 3V, RL = 8Ω, and f = 1kHz 1 1 THD+N (%) 10 THD+N (%) 10 0.1 0.1 0.01 10m 100m 0.01 10m 1 1 OUTPUT POWER (W) Figure 15. Figure 16. THD+N+N vs Output Power VDD = 2.6V, RL = 4Ω, and f = 1kHz THD+N+N vs Output Power VDD = 2.6V, RL = 8Ω, and f = 1kHz 1 1 THD+N (%) 10 THD+N (%) 10 0.1 0.1 0.
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LM4990 www.ti.com SNAS184E – DECEMBER 2002 – REVISED MAY 2013 Typical Performance Characteristics (continued) Power Supply Rejection Ratio (PSRR) vs Frequency VDD = 3V, RL = 8Ω, input floating 0 0 -10 -10 -20 -20 -30 -30 PSRR LEVEL (dB) PSRR LEVEL (dB) Power Supply Rejection Ratio (PSRR) vs Frequency VDD = 3V, RL = 8Ω, input 10Ω terminated -40 -50 -60 -70 -40 -50 -60 -70 -80 -80 -90 -90 -100 20 100 1k -100 20 10k 20k 100 FREQUENCY (Hz) 1k 10k 20k FREQUENCY (Hz) Figure 22.
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LM4990 SNAS184E – DECEMBER 2002 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics (continued) Power Dissipation vs Output Power, VDD = 5V 1.4 Power Dissipation vs Output Power, VDD = 3V 0.5 0.45 : POWER DISSIPATION (W) POWER DISSIPATION (W) 1.2 : 1 0.8 0.6 : 0.4 0.4 0.35 : 0.3 0.25 0.2 0.15 0.1 0.05 0.2 0 0 0 0 0.5 1 1.5 2 2.5 0.2 0.4 0.6 0.8 1 OUTPUT POWER (W) OUTPUT POWER (W) Figure 27. Figure 28. Power Dissipation vs Output Power, VDD = 2.
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LM4990 www.ti.com SNAS184E – DECEMBER 2002 – REVISED MAY 2013 Typical Performance Characteristics (continued) Shutdown Hysteresis Voltage VDD = 3V, SD Mode = GND Shutdown Hysteresis Voltage VDD = 2.6V, SD Mode = VDD Figure 33. Figure 34. Shutdown Hysteresis Voltage VDD = 2.6V, SD Mode = GND Output Power vs Supply Voltage, RL = 4Ω 3.5 f = 1kHz OUTPUT POWER (W) 3 2.5 10% THD+N 2 1.5 1% THD+N 1 500m 0 2.2 3 4 5 5.5 SUPPLY VOLTAGE (V) Figure 35. Figure 36.
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LM4990 SNAS184E – DECEMBER 2002 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics (continued) Output Power vs Supply Voltage, RL = 32Ω Frequency Response vs Input Capacitor Size 1000 OUTPUT POWER (mW) 900 f=1kHz 800 700 600 500 10% THD+N 400 300 1% THD+N 200 100 0 2.2 3 4 5 5.5 SUPPLY VOLTAGE (V) Figure 39. 14 Figure 40.
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LM4990 www.ti.com SNAS184E – DECEMBER 2002 – REVISED MAY 2013 APPLICATION INFORMATION BRIDGE CONFIGURATION EXPLANATION As shown in Figure 5, the LM4990 has two internal operational amplifiers. The first amplifier's gain is externally configurable, while the second amplifier is internally fixed in a unity-gain, inverting configuration. The closed-loop gain of the first amplifier is set by selecting the ratio of Rf to Ri while the second amplifier's gain is fixed by the two internal 20kΩ resistors.
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LM4990 SNAS184E – DECEMBER 2002 – REVISED MAY 2013 www.ti.com SHUTDOWN FUNCTION In order to reduce power consumption while not in use, the LM4990 contains shutdown circuitry that is used to turn off the amplifier's bias circuitry. In addition, the LM4990 contains a Shutdown Mode pin (NGZ and DGQ packages only), allowing the designer to designate whether the part will be driven into shutdown with a high level logic signal or a low level logic signal.
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LM4990 www.ti.com SNAS184E – DECEMBER 2002 – REVISED MAY 2013 AUDIO POWER AMPLIFIER DESIGN A 1W/8Ω Audio Amplifier Power Output 1Wrms Load Impedance Given: 8Ω Input Level 1Vrms Input Impedance Bandwidth 20kΩ 100Hz–20kHz ± 0.25dB A designer must first determine the minimum supply rail to obtain the specified output power. By extrapolating from the Output Power vs Supply Voltage graphs in the Typical Performance Characteristics section, the supply rail can be easily found.
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LM4990 SNAS184E – DECEMBER 2002 – REVISED MAY 2013 www.ti.com Figure 41. HIGHER GAIN AUDIO AMPLIFIER The LM4990 is unity-gain stable and requires no external components besides gain-setting resistors, an input coupling capacitor, and proper supply bypassing in the typical application. However, if a closed-loop differential gain of greater than 10 is required, a feedback capacitor (C4) may be needed as shown in Figure 2 to bandwidth limit the amplifier.
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LM4990 www.ti.com SNAS184E – DECEMBER 2002 – REVISED MAY 2013 Figure 42. DIFFERENTIAL AMPLIFIER CONFIGURATION FOR LM4990 Figure 43.
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LM4990 SNAS184E – DECEMBER 2002 – REVISED MAY 2013 www.ti.com REVISION HISTORY Changes from Revision D (May 2013) to Revision E • 20 Page Changed layout of National Data Sheet to TI format ..........................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 9-Aug-2013 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties.
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PACKAGE MATERIALS INFORMATION www.ti.com 11-Oct-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ LM4990ITL/NOPB DSBGA 9 250 178.0 LM4990ITLX/NOPB DSBGA YZR 9 3000 LM4990LD/NOPB WSON NGZ 10 1000 LM4990MH/NOPB MSOPPower PAD DGQ 10 LM4990MM/NOPB VSSOP DGK LM4990MMX/NOPB VSSOP DGK YZR Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) 8.4 1.57 1.57 0.76 4.0 178.0 8.4 1.57 1.57 0.76 178.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 11-Oct-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM4990ITL/NOPB DSBGA YZR LM4990ITLX/NOPB DSBGA YZR 9 250 210.0 185.0 35.0 9 3000 210.0 185.0 35.0 LM4990LD/NOPB WSON NGZ 10 1000 213.0 191.0 55.0 LM4990MH/NOPB MSOP-PowerPAD DGQ 10 1000 213.0 191.0 55.0 LM4990MM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0 LM4990MMX/NOPB VSSOP DGK 8 3500 367.0 367.
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MECHANICAL DATA NGZ0010B LDA10B (Rev B) www.ti.
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MECHANICAL DATA YZR0009xxx D 0.600±0.075 E TLA09XXX (Rev C) D: Max = 1.502 mm, Min =1.441 mm E: Max = 1.502 mm, Min =1.441 mm 4215046/A NOTES: A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994. B. This drawing is subject to change without notice. www.ti.
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