Datasheet

LM4880
www.ti.com SNAS103C –NOVEMBER 1995–REVISED MAY 2013
C
o
≥ 1/(2π*8Ω*20Hz) = 995 μF; use 1000 μF
The high frequency pole is determined by the product of the desired high frequency pole, f
H
, and the closed-loop
gain, A
V
. With a closed-loop gain magnitude of 1.35 and f
H
= 100 kHz, the resulting GBWP = 135 kHz which is
much smaller than the LM4880 GBWP of 12.5 MHz. This figure displays that if a designer has a need top design
an amplifier with a higher gain, the LM4880 can still be used without running into bandwidth limitations.
LM4880 MDA MWA
DUAL 250 MW AUDIO POWER AMPLIFIER WITH SHUTDOWN MODE
Figure 35. Die Layout (B - Step)
Table 1. Die/Wafer Characteristics
Fabrication Attributes General Die Information
Physical Die Identification LM4880B Bond Pad Opening Size (min) 86µm x 86µm
Die Step B Bond Pad Metalization ALUMINUM
Physical Attributes Passivation NITRIDE
Wafer Diameter 150mm Back Side Metal Bare Back
Dise Size (Drawn) 952µm x 1283µm Back Side Connection GND
37mils x 51mils
Thickness 254µm Nominal
Min Pitch 117µm Nominal
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
Die Bond Pad Coordinate Locations (B - Step)
(Referenced to die center, coordinates in µm) NC = No Connection
X/Y COORDINATES PAD SIZE
SIGNAL NAME PAD# NUMBER
X Y X Y
BYPASS 1 -322 523 86 x 86
GND 2 -359 259 86 x 188
NC 3 -359 5 86 x 86
GND 4 -359 -259 86 x 188
SHUTDOWN 5 -323 -523 86 x 86
INPUT B 6 -109 -523 86 x 86
OUTPUT B 7 8 -523 86 x 86
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