Datasheet

LM3622
www.ti.com SNVS043B –FEBRUARY 2000–REVISED APRIL 2013
PIN DESCRIPTION
Pin No. Name I/O Description
1 LV
SEL
Input Low-voltage detection threshold Select. The threshold is 2.15V/cell when this pin is pulled
low to GND and 2.70V/cell when it is pulled up to V
CC
. The battery voltage is sensed
between CEL and CS pins.
2 LV
ENB
Input Low-voltage detection Enable. The low-voltage detection is enabled when this pin is pulled
Low to GND. Pulling this pin HIGH to V
CC
disables the low-voltage detection.
3 LV Output Output of the low-voltage detection. This pin is a NPN open-collector output that goes to low
impedance state when LV
ENB
is pulled LOW and the battery voltage is below the threshold
set by LV
SEL
. LV stays in HIGH impedance state at any battery voltage when LV
ENB
is
pulled HIGH to V
CC
. LV can be used for turning on a low current source to recondition a
deeply depleted battery.
4 GND Ground IC common.
5 CS Input Input for battery charge current and battery negative-terminal voltage sensing. Battery
charging current is sensed through an external resistor, R
CS
, connected between the
battery's negative terminal and GND. The maximum charge current is regulated to a value
of 100mV/R
CS
.
6 CEL Input Battery positive-terminal voltage sensing.
7 EXT Output Output of the controller for driving a PNP transistor or P-MOSFET. The controller modulates
the current sinking into this pin to control the regulation of either the charge current or the
battery voltage.
8 V
CC
Power Supply IC power supply
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)(2)
Supply Voltage (V
CC
) -0.3 to 24V
LV -0.3 to 24V
EXT
(3)
-0.3 to 24V
LV
SEL
-0.3 to 24V
LV
ENB
-0.3 to 24V
ESD Susceptibility
(4)
2500V
Storage Temperature −40°C to +125°C
Lead Temp. Soldering Vapor Phase (60 sec.) 215°C
Infrared (15 sec.) 220°C
Power Dissipation (T
A
= 25°C)
(5)
Max. Package Dissipation 350mW
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) V
EXT
is not allowed to exceed (V
CC
+ 0.3V) or damage to the device may occur.
(4) Rating is for the human body model, a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin.
(5) The maximum power dissipation must be de-rated at elevated temperatures and is limited by T
JMAX
(maximum junction temperature),
θ
JA
(junction-to-ambient thermal resistance) and T
A
(ambient temperature). The maximum power dissipation at any temperature is:
PDiss
MAX
= (T
JMAX
− T
A
) / θ
JA
up to the value listed in the Absolute Maximum Ratings.
OPERATING RATINGS
(1)
Supply Voltage (V
CC
) 4.5V to 24V
Ambient Temperature Range −20°C to 70°C
Junction Temperature Range −20°C to 85°C
Thermal Resistance, θ
JA
SOIC-8 170°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics.
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