Datasheet

LM185-1.2-N, LM285-1.2-N, LM385-1.2-N

SNVS742E –JANUARY 2000–REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1)(2)(3)

Reverse Current 30mA

Forward Current 10mA

Operating Temperature Range

(4)

LM185-1.2-N −55°C to +125°C

LM285-1.2-N −40°C to +85°C

LM385-1.2-N 0°C to 70°C

ESD Susceptibility

(5)

2kV

Storage Temperature −55°C to +150°C

Soldering Information

TO-92 package: 10 sec. 260°C

TO package:10 sec. 300°C

SOIC and SOT-23 Pkg.

Vapor phase (60 sec.) 215°C

Infrared (15 sec.) 220°C

See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices.

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics. The specifications

apply only for the test conditions listed.

(2) Refer to RETS185H-1.2 for military specifications.

(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

(4) For elevated temperature operation, see Table 1.

(5) The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.

Table 1. T

J(max)

for Elevated Temperature Operation

DEVICE T

J(max)

(°C)

LM185-1.2-N 150

LM285-1.2-N 125

LM385-1.2-N 100

Product Folder Links: LM185-1.2-N LM285-1.2-N LM385-1.2-N