Datasheet

INA826
SBOS562E –AUGUST 2011–REVISED APRIL 2013 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
(1)
PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR
MSOP-8 DGK
INA826 SO-8 D
DFN-8 DRG
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
INA826 UNIT
Supply voltage ±20 V
Input voltage range (–V
S
) – 40 to (+V
S
) + 40 V
REF input ±20 V
Output short-circuit
(2)
Continuous
Operating temperature range, T
A
–50 to +150 °C
Storage temperature range, T
A
–65 to +150 °C
Junction temperature, T
J
+175 °C
Human body model (HBM) 2500 V
ESD rating Charged device model (CDM) 1500 V
Machine model (MM) 150 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) Short-circuit to V
S
/2.
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