Datasheet

INA216
SBOS503C –JUNE 2010–REVISED NOVEMBER 2011 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE INFORMATION
(1)
PACKAGE
PRODUCT GAIN PACKAGE-LEAD DESIGNATOR PACKAGE MARKING
WCSP-4 YFF OW
INA216A1 25V/V
ThinQFN-10 RSW SNJ
WCSP-4 YFF OX
INA216A2 50V/V
ThinQFN-10 RSW SOJ
WCSP-4 YFF OY
INA216A3 100V/V
ThinQFN-10 RSW SPJ
WCSP-4 YFF OZ
INA216A4 200V/V
ThinQFN-10 RSW SQJ
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
INA216 UNIT
Supply Voltage +7 V
Differential (V
IN+
)–(V
IN–
) –5.5 to +5.5 V
Analog Inputs,
V
IN+
, V
IN–
(2)
Common-Mode
(3)
GND–0.3V to +5.5 V
Output
(3)
GND–0.3V to (V+)+0.3 V
Input Current into Any Pin
(3)
5 mA
Operating Temperature –55 to +150 °C
Storage Temperature –65 to +150 °C
Junction Temperature +150 °C
Human Body Model 2.5 kV
ESD Ratings: Charged Device Model 1 kV
Machine Model 200 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) V
IN+
and V
IN–
are the voltages at the IN+ and IN– pins, respectively.
(3) Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA.
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Product Folder Link(s): INA216