Datasheet

DS9638
SNLS389D –MAY 1998–REVISED APRIL 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Storage Temperature Range Ceramic DIP −65°C to +175°C
Molded DIP and SO-8 −65°C to +150°C
Lead Temperature CDIP (Soldering, 60 sec.) 300°C
PDIP (Soldering, 10 sec.) 265°C
Maximum Power Dissipation at 25°C
(3)
CDIP Package 1300 mW
PDIP Package 930 mW
SOIC Package 810 mW
V
CC
Lead Potential to Ground −0.5V to 7V
Input Voltage −0.5V to +7V
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be verified. They are not meant to imply
that the devices should be operated at these limits. The tables of “Electrical Characteristics provide conditions for actual device
operation.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) Derate CDIP package 8.7 mW/°C above 25°C; derate PDIP package 7.5 mW/°C above 25°C; derate SOIC package 6.5 mW°C above
25°C.
Recommended Operating Conditions
DS9638M DS9638C
Min Typ Max Min Typ Max Units
Supply Voltage (V
CC
) 4.5 5.0 5.5 4.75 5.0 5.25 V
Output Current HIGH (I
OH
) −50 −50 mA
Output Current LOW (I
OL
) 50 40 50 mA
Operating Temperature (T
A
) −55 25 125 0 25 70 °C
2 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: DS9638