Datasheet

DS90LV028AQ, DS90LV028AQ-Q1
SNLS299E –MAY 2008–REVISED APRIL 2013 www.ti.com
Truth Table
INPUTS OUTPUT
[R
IN
+] − [R
IN
−] R
OUT
V
ID
≥ 0.1V H
V
ID
≤ −0.1V L
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage (V
CC
) −0.3V to +4V
Input Voltage (R
IN
+, R
IN
−) −0.3V to +3.9V
Output Voltage (R
OUT
) −0.3V to V
CC
+ 0.3V
Maximum Package Power Dissipation @ +25°C
D Package 1068 mW
Derate D Package 9.71 mW/°C above +25°C
Package Thermal Resistance (4-Layer, 2 oz. Cu, JEDEC)
θ
JA
103.0°C/W
θ
JC
41.0°C/W
Storage Temperature Range −65°C to +150°C
Lead Temperature Range Soldering
(4 sec.) +260°C
Maximum Junction Temperature +135°C
ESD Rating
HBM
(3)
≥ 8 kV
MM
(4)
≥ 250 V
CDM
(5)
≥ 1250 V
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply
that the devices should be operated at these limits. Electrical Characteristics specifies conditions of device operation.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) Human Body Model, applicable std. JESD22-A114C
(4) Machine Model, applicable std. JESD22-A115-A
(5) Field Induced Charge Device Model, applicable std. JESD22-C101-C
Recommended Operating Conditions
Min Typ Max Units
Supply Voltage (V
CC
) +3.0 +3.3 +3.6 V
Receiver Input Voltage GND 3.0 V
Operating Free Air
Temperature (T
A
) −40 25 +125 °C
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