Datasheet

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage V
CC
6.0V
Enable Input Voltage (DE, RE)
−0.3V to (V
CC
+0.3V)
Driver Input Voltage (D
IN
) −0.3V to (V
CC
+ 0.3V)
Receiver Output Voltage
(R
OUT
) −0.3V to (V
CC
+ 0.3V)
Driver Output Voltage (DO
±
) −0.3V to +3.9V
Receiver Input Voltage (RI
±
) −0.3V to (V
CC
+ 0.3V)
Driver Short Circuit Current Continuous
ESD (Note 4)
(HBM, 1.5 kΩ, 100 pF)
>
2.0 kV
(EIAJ, 0 Ω, 200 pF)
>
200 V
Maximum Package Power Dissipation at 25˚C
SOIC 960 mW
Derate SOIC Package 7.7mW/˚C
TSSOP 790 mW
Derate TSSOP Package 6.3mW/˚C
Storage Temperature Range −65˚C to +150˚C
Lead Temperature
(Soldering, 4 sec.) 260˚C
Recommended Operating
Conditions
Min Max Units
Supply Voltage (V
CC
) or 3.0 3.6 V
Supply Voltage (V
CC
) 4.5 5.5 V
Receiver Input Voltage 0.0 2.4 V
Operating Free Air
Temperature T
A
−40 +85 ˚C
DC Electrical Characteristics
T
A
= −40˚C to +85˚C unless otherwise noted, V
CC
= 3.3
±
0.3V. (Notes 2, 3)
Symbol Parameter Conditions Pin Min Typ Max Units
DIFFERENTIAL DRIVER CHARACTERISTICS
V
OD
Output Differential Voltage R
L
= 100Ω ( Figure 1 ) DO+,
DO−
250 350 450 mV
∆V
OD
V
OD
Magnitude Change 660mV
V
OS
Offset Voltage 1 1.25 1.7 V
∆V
OS
Offset Magnitude Change 5 60 mV
I
OZD
TRI-STATE
®
Leakage V
OUT
=V
CC
or GND, DE = 0V −10
±
1 +10 µA
I
OXD
Power-Off Leakage V
OUT
= 3.6V or GND, V
CC
= 0V −10
±
1 +10 µA
I
OSD
Output Short Circuit Current V
OUT
= 0V, DE = V
CC
−10 −6 −4 mA
DIFFERENTIAL RECEIVER CHARACTERISTICS
V
OH
Voltage Output High VID = +100 mV I
OH
= −400 µA R
OUT
2.9 3.3 V
Inputs Open 2.9 3.3 V
V
OL
Voltage Output Low I
OL
= 2.0 mA, VID = −100 mV 0.1 0.4 V
I
OS
Output Short Circuit Current V
OUT
= 0V −75 −34 −20 mA
V
TH
Input Threshold High RI+,
RI−
+100 mV
V
TH
Input Threshold Low −100 mV
I
IN
Input Current V
IN
= +2.4V or 0V, V
CC
= 3.6V or
0V
−10
±
1 +10 µA
DEVICE CHARACTERISTICS
V
IH
Minimum Input High Voltage D
IN
,
DE, RE
2.0 V
CC
V
V
IL
Maximum Input Low Voltage GND 0.8 V
I
IH
Input High Current V
IN
=V
CC
or 2.4V
±
1
±
10 µA
I
IL
Input Low Current V
IN
= GND or 0.4V
±
1
±
10 µA
V
CL
Input Diode Clamp Voltage I
CLAMP
= −18 mA −1.5 −0.7 V
I
CCD
Power Supply Current DE = RE = V
CC
V
CC
9 12.5 mA
I
CCR
DE=RE=0V 4.5 7.0 mA
I
CCZ
DE = 0V, RE = V
CC
3.7 7.0 mA
I
CC
DE=V
CC
,RE=0V 15 20 mA
C
D output
Capacitance DO+,
DO−
5pF
C
R input
Capacitance RI+,
RI−
5pF
DS90LV019
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