Datasheet
DS15BR400, DS15BR401
SNLS224G –AUGUST 2006–REVISED APRIL 2013
www.ti.com
Absolute Maximum Ratings
(1)
Supply Voltage (V
DD
) −0.3V to +4.0V
CMOS Input Voltage −0.3V to (V
DD
+0.3V)
LVDS Receiver Input Voltage −0.3V to (V
DD
+0.3V)
LVDS Driver Output Voltage −0.3V to (V
DD
+0.3V)
LVDS Output Short Circuit Current +40 mA
Junction Temperature +150°C
Storage Temperature −65°C to +150°C
Lead Temperature (Solder, 4sec) 260°C
Max Pkg Power Capacity @ 25°C
TQFP 1.64W
WQFN 4.16W
Thermal Resistance (θ
JA
)
TQFP 76°C/W
WQFN 30°C/W
Package Derating above +25°C
TQFP 13.2mW/°C
WQFN 33.3mW/°C
ESD Last Passing Voltage
HBM, 1.5kΩ, 100pF 8 kV
LVDS pins to GND only 15 kV
EIAJ, 0Ω, 200pF 250V
Charged Device Model 1000V
(1) Absolute maximum ratings are those values beyond which damage to the device may occur. The databook specifications should be met,
without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading variables. TI
does not recommend operation of products outside of recommended operation conditions.
Recommended Operating Conditions
Supply Voltage (V
DD
) 3.0V to 3.6V
Input Voltage (V
I
)
(1)
0V to V
DD
Output Voltage (V
O
) 0V to V
DD
Operating Temperature (T
A
)
Industrial −40°C to +85°C
(1) V
ID
max < 2.4V
Electrical Characteristics
Over recommended operating supply and temperature ranges unless other specified.
Typ
Symbol Parameter Conditions Min Max Units
(1)
LVCMOS DC SPECIFICATIONS (PWDN, PEM)
V
IH
High Level Input Voltage 2.0 V
DD
V
V
IL
Low Level Input Voltage GND 0.8 V
I
IH
High Level Input Current V
IN
= V
DD
= 3.6V (PWDN pin) −10 +10 µA
I
IHR
High Level Input Current V
IN
= V
DD
= 3.6V (PEM pin) 40 200 µA
I
IL
Low Level Input Current V
IN
= V
SS
, V
DD
= 3.6V −10 +10 µA
C
IN1
LVCMOS Input Capacitance Any Digital Input Pin to V
SS
5.5 pF
V
CL
Input Clamp Voltage I
CL
= −18 mA, V
DD
= 0V −1.5 −0.8 V
(1) Typical parameters are measured at V
DD
= 3.3V, T
A
= 25°C. They are for reference purposes, and are not production-tested.
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