Datasheet

1.10
0.96
1.00
0.98
1.02
1.04
GVDD – Gate Drive – V
Normalized R / (R at 12 V)
DS(on) DS(on)
11.010.08.0 10.59.58.5 9.0 11.5
1.06
1.08
12
T = 25°C
J
0
100
40
50
60
70
80
90
Efficiency – %
f – Switching Frequency – kHz
0 100 150 200 250 300 350 400 450 50050
10
20
30
Load = 5 A
PVDD = 50 V
T = 75°C
Full Bridge
C
1.6
0.4
0.6
0.8
1.0
T – Junction Temperature – C
J
o
Normalized R / (R at 25 C)
DS(on) DS(on)
o
8040 120–40 6020–20 0 100
1.2
1.4
140
GVDD = 12 V
–1
5
0
1
2
3
V – Voltage – V
I – Current – A
1.20.80 10.60.2 0.4
4
6
T = 25°C
J
DRV8412
DRV8432
SLES242C –DECEMBER 2009–REVISED MAY 2010 www.ti.com
TYPICAL CHARACTERISTICS
EFFICIENCY NORMALIZED R
DS(on)
vs vs
SWITCHING FREQUENCY (DRV8432) GATE DRIVE
Figure 1. Figure 2.
NORMALIZED R
DS(on)
vs DRAIN TO SOURCE DIODE FORWARD
JUNCTION TEMPERATURE ON CHARACTERISTICS
Figure 3. Figure 4.
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