Datasheet

5
Quiescent Device
Current
I
CC
V
CC
or
GND
0 6 - - 8 - 80 - 160 µA
Three- State Leakage
Current
I
OZ
V
IL
or V
IH
V
O
=
V
CC
or
GND
6--±0.5 - ±5.0 - ±10 µA
HCT TYPES
High Level Input
Voltage
V
IH
- - 4.5 to
5.5
2-- 2 - 2 - V
Low Level Input
Voltage
V
IL
- - 4.5 to
5.5
- - 0.8 - 0.8 - 0.8 V
High Level Output
Voltage
CMOS Loads
V
OH
V
IH
or V
IL
-0.02 4.5 4.4 - - 4.4 - 4.4 - V
High Level Output
Voltage
TTL Loads
-6 4.5 3.98 - - 3.84 - 3.7 - V
Low Level Output
Voltage
CMOS Loads
V
OL
V
IH
or V
IL
0.02 4.5 - - 0.1 - 0.1 - 0.1 V
Low Level Output
Voltage
TTL Loads
6 4.5 - - 0.26 - 0.33 - 0.4 V
Input Leakage
Current
I
I
V
CC
and
GND
0 5.5 - ±0.1 - ±1-±1 µA
Quiescent Device
Current
I
CC
V
CC
or
GND
0 5.5 - - 8 - 80 - 160 µA
Three- State Leakage
Current
I
OZ
V
IL
or V
IH
V
O
=
V
CC
or
GND
5.5 - - ±0.5 - ±5.0 - ±10 µA
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆I
CC
(Note 2)
V
CC
-2.1
- 4.5 to
5.5
- 100 360 - 450 - 490 µA
NOTE:
2. For dual-supply systems theoretical worst case (V
I
= 2.4V, V
CC
= 5.5V) specification is 1.8mA.
DC Electrical Specifications (Continued)
PARAMETER SYMBOL
TEST
CONDITIONS
V
CC
(V)
25
o
C -40
o
C TO 85
o
C -55
o
C TO 125
o
C
UNITSV
I
(V) I
O
(mA) MIN TYP MAX MIN MAX MIN MAX
HCT Input Loading Table
INPUT
UNIT LOADS
HCT540 HCT541
A0 - A7 1 0.4
OE2 0.75 0.75
OE1 1.15 1.15
NOTE: Unit Load is ∆I
CC
limit specific in DC Electrical Specifications
Table, e.g., 360µA max. at 25
o
C.
CD54/74HC540, CD74HCT540, CD54/74HC541, CD54/74HCT541CD54/74HC540, CD74HCT540, CD54/74HC541, CD54/74HCT541