Datasheet

N
VREF
CE
VFB
TS
VCC
HIDRV
N
PH
BTST
REGN
LODRV
GND
SRP
SRN
PACK+
PACK-
ADAPTER +
ADAPTER -
C4
C7
Q4
SiR426
Q5
SiR426
C6
L1
3.3 µH*
D1
BAT54
C5
C10
0.1 µF
C9
10 µF
VREF
Pack
Thermistor
Sense
bq24600
VREF
ISET
STAT
VBAT
R9
9.31 kW
R10
430 kW
R1
100 kW
PG
ADAPTER +
Cff
22pF
0.1 µF
1 µF
1 µF
1 µF
RSR
0.010 Ω
C11
0.1 µF
C12
10 µF*
C13
10 µF*
R2
900 kW
R1310 kW
R1410 kW
R7
100 kW
R8
22.1 kW
PwrPad
D2
MBRS540T3
C8
10 µF
R6
10 W
D3
D4
R5
100 W
0.1 Fμ
R11
2 kW
C2
2.2 µF
bq24600
SLUS891A –FEBRUARY 2010– REVISED OCTOBER 2011 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
TYPICAL APPLICATION
VIN = 28 V, BAT = 5-cell Li-Ion, I
charge
= 3 A, I
pre-charge
= I
term
= 0.3 A
Figure 1. Typical System Schematic
ORDERING INFORMATION
ODERING NUMBER
PART NUMBER IC MARKING PACKAGE QUANTITY
(Tape and Reel)
bq24600 OAQ 16-pin 3.5-mm × 3.5-mm QFN bq24600RVAR 3000
bq24600RVAT 250
2 Submit Documentation Feedback Copyright © 2010–2011, Texas Instruments Incorporated
Product Folder Link(s): bq24600