Datasheet

V
IREG*PRE
+
0.1V
RSET2
1000,
bq24100, bq24103, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
SLUS606O –JUNE 2004–REVISED MARCH 2010 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
T
J
= 0°C to 125°C and recommended supply voltage range (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
OPRECHG
Precharge range V
I(BAT)
< V
LOWV
, t < t
PRECHG
15 200 mA
V
(ISET2)
Precharge set voltage, ISET2 V
I(BAT)
< V
LOWV
, t < t
PRECHG
100 mV
K
(ISET2)
Precharge current set factor 1000 V/A
100 mV ≤ V
IREG-PRE
≤ 100 mV,
V
IREG-PRE
Voltage regulated across R
SNS
-Accuracy –20% 20%
(PGM) Where
1.2 kΩ ≤ RSET2 ≤ 10 kΩ, Select RSET1
to program V
IREG-PRE,
V
IREG-PRE
(Measured) = I
OPRE-CHG
× R
SNS
(–20% to 20% excludes errors due to RSET1
and R
SNS
tolerances)
CHARGE TERMINATION (CURRENT TAPER) DETECTION
I
TERM
Charge current termination detection range V
I(BAT)
> V
RCH
15 200 mA
Charge termination detection set voltage,
V
TERM
V
I(BAT)
> V
RCH
100 mV
ISET2
K
(ISET2)
Termination current set factor 1000 V/A
Charger termination accuracy V
I(BAT)
> V
RCH
–20% 20%
Both rising and falling,
t
dg-TERM
Deglitch time for charge termination 20 30 40 ms
2-mV overdrive t
RISE
, t
FALL
= 100 ns
TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR
%
LTF
Cold temperature threshold, TS, % of bias V
LTF
= V
O(VTSB)
× % LTF/100 72.8% 73.5% 74.2%
%
HTF
Hot temperature threshold, TS, % of bias V
HTF
= V
O(VTSB)
× % HTF/100 33.7% 34.4% 35.1%
Cutoff temperature threshold, TS, % of
%
TCO
V
TCO
= V
O(VTSB)
× % TCO/100 28.7% 29.3% 29.9%
bias
LTF hysteresis 0.5% 1% 1.5%
Deglitch time for temperature fault, TS 20 30 40
Both rising and falling,
t
dg-TS
ms
Deglitch time for temperature fault, TS,
2-mV overdrive t
RISE
, t
FALL
= 100 ns
500
bq24109, bq24104
V
CC
> V
IN(min)
,
V
O(VTSB)
TS bias output voltage 3.15 V
I
(VTSB)
= 10 mA 0.1 mF ≤ C
O(VTSB)
≤ 1 mF
V
CC
>
IN(min)
,
V
O(VTSB)
TS bias voltage regulation accuracy –10% 10%
I
(VTSB)
= 10 mA 0.1 mF ≤ C
O(VTSB)
≤ 1 mF
BATTERY RECHARGE THRESHOLD
V
RCH
Recharge threshold voltage Below V
OREG
75 100 125 mV/cell
V
I(BAT)
< decreasing below threshold,
t
dg-RCH
Deglitch time 20 30 40 ms
t
FALL
= 100 ns 10-mV overdrive
STAT1, STAT2, AND PG OUTPUTS
V
OL(STATx)
Low-level output saturation voltage, STATx I
O
= 5 mA 0.5
V
V
OL(PG)
Low-level output saturation voltage, PG I
O
= 10 mA 0.1
CE CMODE, CELLS INPUTS
V
IL
Low-level input voltage I
IL
= 5 mA 0 0.4
V
V
IH
High-level input voltage I
IH
= 20 mA 1.3 V
CC
TTC INPUT
t
PRECHG
Precharge timer 1440 1800 2160 s
t
CHARGE
Programmable charge timer range t
(CHG)
= C
(TTC)
× K
(TTC)
25 572 minutes
Charge timer accuracy 0.01 mF ≤ C
(TTC)
≤ 0.18 mF -10% 10%
K
TTC
Timer multiplier 2.6 min/nF
C
TTC
Charge time capacitor range 0.01 0.22 mF
V
TTC_EN
TTC enable threshold voltage V
(TTC)
rising 200 mV
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