Datasheet

TSM2314
20V N-Channel MOSFET
Document Number: DS_P0000056 2 Version: E15
Electrical Specifications (Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA BV
DSS
20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
0.6 0.85 1.2 V
Gate Body Leakage V
GS
= ±4.5V, V
DS
= 0V I
GSS
-- -- ±1.5 µA
Zero Gate Voltage Drain Current V
DS
= 16V, V
GS
= 0V I
DSS
-- -- 1.0 µA
On-State Drain Current V
DS
≥
10V, V
GS
= 4.5V I
D(ON)
15 -- -- A
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 4.9A
R
DS(ON)
-- 27 33
mΩ V
GS
= 2.5V, I
D
= 4.4A -- 33 40
V
GS
= 1.8V, I
D
= 2.9A -- 80 100
Forward Transconductance V
DS
= 15V, I
D
= 5.0A g
fs
-- 40 -- S
Diode Forward Voltage I
S
= 1.0A, V
GS
= 0V V
SD
-- 0.8 1.2 V
Dynamic
b
Total Gate Charge
V
DS
= 10V, I
D
= 5.0A,
V
GS
= 4.5V
Q
g
-- 11 14
nC
Gate-Source Charge Q
gs
-- 1.5 --
Gate-Drain Charge Q
gd
-- 2.1 --
Input Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 900 --
pF
Output Capacitance C
oss
-- 140 --
Reverse Transfer Capacitance C
rss
-- 100 --
Switching
c
Turn-On Delay Time
V
DD
= 10V, R
L
= 10Ω,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6Ω
t
d(on)
-- 0.53 0.8
nS
Turn-On Rise Time t
r
-- 1.4 2.2
Turn-Off Delay Time t
d(off)
-- 13.5 20
Turn-Off Fall Time t
f
-- 5.9 9
Notes:
a. pulse test: PW
≤
300µS, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.