Datasheet

4 GBU1001 - GBU1007
Taiwan Semiconductor
3 Version:K1705
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
0
5
10
15
0 30 60 90 120 150
CASE TEMPERATURE (
°
C)
RESISTER OR
INDUCTIVE LOAD
WITH HEATSINK
10
100
1000
0.1 1 10 100
REVERSE VOLTAGE (V)
GBU1001 - GBU1004
GBU1005 - GBU1007
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
1000
0 20 40 60 80 100 120 140
T
J
=25
°
C
T
J
=125
°
C
0.1
1
10
100
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
T
J
=25°C
T
J
=125°C
UF1DLW
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)