Datasheet
EMX4 / UMX4N / IMX4
Transistors
Rev.C 1/3
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
zFeatures
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T=1.5GHz)
3) Low output capacitance. (Cob=0.9pF)
zEquivalent circuits
EMX4 / UMX4N
(3) (2) (1)
(4) (5) (6)
IMX4
(4) (5) (6)
(3) (2) (1)
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
30
20
3
50
300(TOTAL)
150(TOTAL)
EMX4 / UMX4N
IMX4
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
∗1
∗2
zPackage, marking, and packaging specifications
Type
EMX4
EMT6
X4
T2R
8000
IMX4
SMT6
X4
T108
3000
UMX4N
UMT6
X4
TR
3000
Package
Marking
Code
Basic ordering unit (pieces)
zDimensions (Unit : mm)
UMX4N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
IMX4
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
ROHM : EMT6
EMX4
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max.
Unit
Conditions
Transition frequency
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
30
20
3
−
−
56
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.5
180
0.5
1.6
V
V
V
µA
µA
−
V
MHz
∗
Cob
600 1500
0.95
−
pF
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=15V
V
EB
=2V
V
CE
/I
E
=10V/ −10mA, f=200MHz
V
CB
/f=10V/1MHz, I
E
=0A
I
C
/I
B
=20mA/4mA
V
CE
/I
C
=10V/10mA
∗Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
−
13
rbb' Cc
6
ps
V
CB
=10V, I
C
=10mA , f=31.8MHz
Collector-base time constant
−
−
NF
4.5
dB
V
CE
=12V, I
C
=2mA , f=200MHz , Rg=50Ω
Noise factor
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.