Datasheet

Features
PNP Transistors
• Silicon epitaxial planar transistors
• For switching and amplifier applications
Unit
Collector Base Voltage
-V
CBO
50 V
Collector Emitter Voltage
-V
CEO
45 V
Emitter Base Voltage
-V
EBO
5
Collector Current
-I
C
500 mA
Power Dissipation
Ptot
300
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
- 55 to + 150
O
C
Characteristics at T
a
= 25°C
Parameter
Symbol Max. Unit
DC Current Gain
at -V
CE
= 1 V, -I
C
= 100 mA
at -V
CE
= 1 V, -I
C
= 500 mA
- RND BC807-16
- RND BC807-40
h
FE
h
FE
h
FE
100
250
40
-
-
-
250
600
-
-
-
-
Collector Base Cutoff Current
at -V
CB
= 20 V
-I
CBO
-
-
100
nA
Emitter Base Cutoff Current
at -VEB = 5 V
-IEBO
-
100
nA
Collector Emitter Breakdown Voltage
at -I
C
= 10 mA
-
V
(BR)CEO
45 - -
V
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VCE(sat)
-
0.7
V
Base Emitter Voltage
at -IC = 500 mA, -VCE = 1 V
-VBE(on)
- - 1.2
V
Transition Frequency
at -VCE = 5 V, -IC = 10 mA, f = 50 MHz
80
-
-
MHz
-
9
-
C
cbo
pF
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
V
Min.
Typ.
-
O
C
-
f
T
Collector Base C
ap
a
cit
a
nc
e
at -V
CB
= 10 V, f = 1 MHz
Value